Electrical decoupling effect on intermediate band Ti-implanted silicon layers

Pastor Pastor, David and Olea Ariza, Javier and Prado Millán, Alvaro del and García Hemme, Eric and García Hernansanz, Rodrigo and Mártil de la Plaza, Ignacio and González Díaz, Germán (2013). Electrical decoupling effect on intermediate band Ti-implanted silicon layers. "Journal of Physics D: Applied Physics", v. 46 (n. 13); pp. 1-6. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/46/13/135108.

Description

Title: Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Author/s:
  • Pastor Pastor, David
  • Olea Ariza, Javier
  • Prado Millán, Alvaro del
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Item Type: Article
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Date: April 2013
ISSN: 0022-3727
Volume: 46
Subjects:
Freetext Keywords: Electronics and devices, Semiconductors, Surfaces, interfaces and thin films Optics, quantum optics and lasers
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

More information

Item ID: 26832
DC Identifier: http://oa.upm.es/26832/
OAI Identifier: oai:oa.upm.es:26832
DOI: 10.1088/0022-3727/46/13/135108
Official URL: http://iopscience.iop.org/0022-3727/46/13/135108/
Deposited by: Memoria Investigacion
Deposited on: 28 Jun 2014 09:56
Last Modified: 22 Sep 2014 11:43
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