Low-power vertical cavity NAND gate

Hurtado Villavieja, Antonio and González Marcos, Ana and Martín Pereda, José Antonio (2005). Low-power vertical cavity NAND gate. In: "Photonic Materials, Devices, and Applications", 09/05/2005, Sevilla, España.


Title: Low-power vertical cavity NAND gate
  • Hurtado Villavieja, Antonio
  • González Marcos, Ana
  • Martín Pereda, José Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: Photonic Materials, Devices, and Applications
Event Dates: 09/05/2005
Event Location: Sevilla, España
Title of Book: Proceedings of SPIE
Date: 7 July 2005
Volume: 5840
Freetext Keywords: Vertical-Cavity Semiconductor Optical Amplifier (VCSOA), Optical Bistability, Logic Gate, Optical Logic, optical computing
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

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Item ID: 26855
DC Identifier: http://oa.upm.es/26855/
OAI Identifier: oai:oa.upm.es:26855
Deposited by: Biblioteca ETSI Telecomunicación
Deposited on: 02 Jun 2014 05:39
Last Modified: 22 Sep 2014 11:43
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