Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs

Luna García de la Infanta, Esperanza and Trampert, Achim and Miguel-Sanchez, J. and Fernández González, Alvaro de Guzmán and Ploog, K.H. (2008). Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs. "Journal of Physics and Chemistry of Solids", v. 69 (n. 2-3); pp. 343-346. ISSN 0022-3697. https://doi.org/10.1016/j.jpcs.2007.07.063.

Description

Title: Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs
Author/s:
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
  • Miguel-Sanchez, J.
  • Fernández González, Alvaro de Guzmán
  • Ploog, K.H.
Item Type: Article
Título de Revista/Publicación: Journal of Physics and Chemistry of Solids
Date: February 2008
ISSN: 0022-3697
Volume: 69
Subjects:
Freetext Keywords: A. Quantum wells; A. Semiconductors; B. Epitaxial growth; C. Electron microscopy; D. Luminescence
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work, we present a detailed transmission electron microscopy analysis of the interfacial structure and composition uniformity of (Ga,In)(N,As) quantum wells grown by molecular beam epitaxy on vicinal GaAs(1 1 1)B substrates. Vertical composition fluctuations inside the (Ga,In)(N,As) quantum well are detected depending on the growth conditions, in particular the V/III flux ratio and the growth rate. This vertical composition fluctuation due to the phase separation tendency is in contrast to the (0 0 1) case, where the fluctuations proceed in the lateral direction. The specific character of the phase instabilities is discussed with respect to the spinodal decomposition of the (Ga,In)(N,As) alloy grown by step-flow on the misoriented (1 1 1)B substrates. The vertical composition fluctuations are explained by the formation of step bunches of alternating composition as a consequence of the different propagation velocity of steps with different atom terminations.

More information

Item ID: 2690
DC Identifier: http://oa.upm.es/2690/
OAI Identifier: oai:oa.upm.es:2690
DOI: 10.1016/j.jpcs.2007.07.063
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/229/description#description
Deposited by: Memoria Investigacion
Deposited on: 24 Mar 2010 11:19
Last Modified: 20 Apr 2016 12:22
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