A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations

Martínez Sáez, Enrique and Marian, Jaime and Arsenlis, A. and Victoria, Maximo Pedro and Perlado Martín, José Manuel (2008). A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations. "Philosophical Magazine", v. 88 (n. 6); pp. 809-840. ISSN 1478-6435. https://doi.org/10.1080/14786430801986662.

Description

Title: A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations
Author/s:
  • Martínez Sáez, Enrique
  • Marian, Jaime
  • Arsenlis, A.
  • Victoria, Maximo Pedro
  • Perlado Martín, José Manuel
Item Type: Article
Título de Revista/Publicación: Philosophical Magazine
Date: February 2008
ISSN: 1478-6435
Volume: 88
Subjects:
Freetext Keywords: Dislocation dynamics; stacking-fault tetrahedra; irradiation damage; Cu plasticity
Faculty: E.T.S.I. Industriales (UPM)
Department: Ingeniería Nuclear [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present a comprehensive dislocation dynamics (DD) study of the strength of stacking fault tetrahedra (SFT) to screw dislocation glide in fcc Cu. Our methodology explicitly accounts for partial dislocation reactions in fcc crystals, which allows us to provide more detailed insights into the dislocation– SFT processes than previous DD studies. The resistance due to stacking fault surfaces to dislocation cutting has been computed using atomistic simulations and added in the form of a point stress to our DD methodology. We obtain a value of 1658.9 MPa, which translates into an extra force resolved on the glide plane that dislocations must overcome before they can penetrate SFTs. In fact, we see they do not, leading to two well differentiated regimes: (i) partial dislocation reactions, resulting in partial SFT damage, and (ii) impenetrable SFT resulting in the creation of Orowan loops. We obtain SFT strength maps as a function of dislocation glide plane-SFT intersection height, interaction orientation, and dislocation line length. In general SFTs are weaker obstacles the smaller the encountered triangular area is, which has allowed us to derive simple scaling laws with the slipped area as the only variable. These laws suffice to explain all strength curves and are used to derive a simple model of dislocation–SFT strength. The stresses required to break through obstacles in the 2.5–4.8-nm size range have been computed to be 100–300 MPa, in good agreement with some experimental estimations and molecular dynamics calculations.

More information

Item ID: 2691
DC Identifier: http://oa.upm.es/2691/
OAI Identifier: oai:oa.upm.es:2691
DOI: 10.1080/14786430801986662
Official URL: http://www.tandf.co.uk/journals/tphm
Deposited by: Memoria Investigacion
Deposited on: 24 Mar 2010 09:54
Last Modified: 06 Sep 2017 16:50
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