Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

Montes Bajo, Miguel and Hierro Cano, Adrián and Ulloa Herrero, José María and Fernández González, Alvaro de Guzmán and Damilano, B. and Hugues, M. and Al Khalfiou, M. and Duboz, Jean-Yves and Massies, J. (2008). Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes. "Journal of Physics D: Applied Physics", v. 41 (n. 15); pp.. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/41/15/155102.

Description

Title: Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
Author/s:
  • Montes Bajo, Miguel
  • Hierro Cano, Adrián
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
  • Damilano, B.
  • Hugues, M.
  • Al Khalfiou, M.
  • Duboz, Jean-Yves
  • Massies, J.
Item Type: Article
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Date: August 2008
ISSN: 0022-3727
Volume: 41
Subjects:
Freetext Keywords: Modeling; Power system stability; Wind power generation.
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The characteristic temperatures of the threshold current density, T0, and external differential quantum efficiency, T1, of a series of (Ga,In)(N,As)/GaAs quantum well (QW) laser diodes are measured in the wavelength range from 1 to 1.5μm. It is found that both T0 and T1 strongly decrease with increasing lasing wavelength. The origin of this degradation is shown to be, in the case of T0, mostly dominated by a decrease in the transparency current density characteristic temperature, an increase in the optical losses and a decrease in the modal gain. The degradation of T1 is mainly due to the increase in the optical losses. The effective carrier recombination lifetime in the QW is shown to decrease from 1.2 to 0.2 ns with N content up to 2%, in good agreement with previous reports that link this low lifetime to non-radiative monomolecular recombination through defects in the QW. Carrier leakage is ruled out as the dominant process degrading T0 and T1 on the basis of the temperature dependence of the effective carrier recombination lifetime.

More information

Item ID: 2701
DC Identifier: http://oa.upm.es/2701/
OAI Identifier: oai:oa.upm.es:2701
DOI: 10.1088/0022-3727/41/15/155102
Official URL: http://iopscience.iop.org/0022-3727/41/15/155102/
Deposited by: Memoria Investigacion
Deposited on: 08 Apr 2010 10:44
Last Modified: 27 Feb 2015 07:55
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