Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy

Niebelschutz, M. and Cimalla, V. and Ambacher, O. and Machleidt, T. and Franke, K-H and Ristic, Jelena and Grandal Quintana, Javier and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2008). Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy. "Physica Status Solidi B", v. 5 (n. 6); pp. 1609-1611. ISSN 0370-1972. https://doi.org/10.1002/pssc.200778533.

Description

Title: Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy
Author/s:
  • Niebelschutz, M.
  • Cimalla, V.
  • Ambacher, O.
  • Machleidt, T.
  • Franke, K-H
  • Ristic, Jelena
  • Grandal Quintana, Javier
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi B
Date: May 2008
ISSN: 0370-1972
Volume: 5
Subjects:
Freetext Keywords: GaN, InN, nanocolumns, atomic, force microscopy
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

High quality InN and GaN nanocolumns of different length and diameter grown by molecular beam epitaxy (MBE) were electrically characterized directly and non-destructively by Atomic Force Microscopy (AFM) as a function of the column diameter. The “exact” column diameter was determined from AFM images by Blind Tip Estimation (BTE) and subsequent image reconstruction in order to avoid artefacts due to the finite AFM tip radius. In GaN, the conductivity rises up to a “critical” diameter due to a depletion region at the surface of the nanocolumns and remains constant above. In contrast, the electron accumulation at the surface causes decreasing conductivity in InN nanocolumns with increasing diameter. Thus, the nanocolumn surface acts as the preferential conduction path. These facts prove that there is electron accumulation in as-grown non-polar InN surfaces, according to calculations of the Fermi level pinning in InN.

More information

Item ID: 2703
DC Identifier: http://oa.upm.es/2703/
OAI Identifier: oai:oa.upm.es:2703
DOI: 10.1002/pssc.200778533
Official URL: http://www3.interscience.wiley.com/journal/119139597/issue
Deposited by: Memoria Investigacion
Deposited on: 12 May 2010 08:39
Last Modified: 20 Apr 2016 12:23
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