Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction

Redondo-Cubero, Andrés and Gago, R. and González-Posada Flores, Fernando and Kreissig, U. and Di Forte Poisson, M-A. and Braña, A.F. and Muñoz Merino, Elias (2008). Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction. "Thin Solid Films", v. 516 (n. 23); pp. 8447-8452. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2008.04.069.

Description

Title: Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction
Author/s:
  • Redondo-Cubero, Andrés
  • Gago, R.
  • González-Posada Flores, Fernando
  • Kreissig, U.
  • Di Forte Poisson, M-A.
  • Braña, A.F.
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: October 2008
ISSN: 0040-6090
Volume: 516
Subjects:
Freetext Keywords: AlGaN; HEMT; RBS; ERDA; XRD
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (959kB) | Preview

Abstract

The Al content in AlxGa1 − xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1bxb0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xN0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis.

More information

Item ID: 2705
DC Identifier: http://oa.upm.es/2705/
OAI Identifier: oai:oa.upm.es:2705
DOI: 10.1016/j.tsf.2008.04.069
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description
Deposited by: Memoria Investigacion
Deposited on: 14 May 2010 08:34
Last Modified: 20 Apr 2016 12:23
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM