Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes

Rivera de Lucas, Carlos and Muñoz Merino, Elias (2008). Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes. "Applied Physics Letters", v. 92 (n. 23); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2942384.

Description

Title: Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes
Author/s:
  • Rivera de Lucas, Carlos
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: June 2008
ISSN: 0003-6951
Volume: 92
Subjects:
Freetext Keywords: giant photocurrent gain; capacitance-voltage; charge accumulation
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The authors report on the observation of a giant photocurrent gain (>106) in highly doped (In,Ga)N/GaN multiple-quantum-well-based photodiodes, which decreases with temperature. This large photocurrent gain appears at low forward bias and strongly depends on the current transport mechanism. Results of capacitance-voltage measurements show that the photocurrent gain is related to the screening of the built-in electric field by charge accumulation. The role of the (Al,Ga)N electron blocking layer in current transport has been studied by comparing samples nominally identical except for the existence of this layer.

More information

Item ID: 2711
DC Identifier: http://oa.upm.es/2711/
OAI Identifier: oai:oa.upm.es:2711
DOI: 10.1063/1.2942384
Official URL: http://apl.aip.org/applab/v92/i23
Deposited by: Memoria Investigacion
Deposited on: 12 Apr 2010 10:59
Last Modified: 20 Apr 2016 12:23
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