Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy

Ulloa Herrero, José María and Anantahanasarn, S. and Van Veldhoven, P.J and Koenraad, P.M. and Nötzel, R. (2008). Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy. "Applied Physics Letters", v. 92 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2884692.

Description

Title: Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy
Author/s:
  • Ulloa Herrero, José María
  • Anantahanasarn, S.
  • Van Veldhoven, P.J
  • Koenraad, P.M.
  • Nötzel, R.
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: February 2008
ISSN: 0003-6951
Volume: 92
Subjects:
Faculty: E.T.S.I. Aeronáuticos (UPM)
Department: Aerotecnia [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAsInGaAsPInP quantum dots _QDs_ are modified when an ultrathin _0–1.5 ML_ GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the AsP exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the AsP exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

More information

Item ID: 2718
DC Identifier: http://oa.upm.es/2718/
OAI Identifier: oai:oa.upm.es:2718
DOI: 10.1063/1.2884692
Official URL: http://apl.aip.org/applab/v92/i8
Deposited by: Memoria Investigacion
Deposited on: 06 Apr 2010 08:12
Last Modified: 12 Feb 2015 13:59
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