A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate

Galiana Blanco, Beatriz and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Volz, K. and Stolz, W. (2008). A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate. "Applied Physics Letters", v. 92 (n. 15); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2901029.

Description

Title: A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate
Author/s:
  • Galiana Blanco, Beatriz
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Volz, K.
  • Stolz, W.
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: April 2008
ISSN: 0003-6951
Volume: 92
Subjects:
Faculty: E.T.S.I. Aeronáuticos (UPM)
Department: Aerotecnia [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50 nm) grown at a low temperature (≈500 °C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAsGe heterointerface decrease.

More information

Item ID: 2723
DC Identifier: http://oa.upm.es/2723/
OAI Identifier: oai:oa.upm.es:2723
DOI: 10.1063/1.2901029
Official URL: http://apl.aip.org/applab/v92/i15
Deposited by: Memoria Investigacion
Deposited on: 05 Apr 2010 10:42
Last Modified: 16 Feb 2015 10:03
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