Analysis of germanium epiready wafers for III-V heteroepitaxy

Rey-Stolle Prado, Ignacio; Barrigón Montañés, Enrique; Galiana Blanco, Beatriz y Algora del Valle, Carlos (2008). Analysis of germanium epiready wafers for III-V heteroepitaxy. "Journal of Crystal Growth", v. 310 (n. 23); pp. 4803-4807. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2008.07.116.

Descripción

Título: Analysis of germanium epiready wafers for III-V heteroepitaxy
Autor/es:
  • Rey-Stolle Prado, Ignacio
  • Barrigón Montañés, Enrique
  • Galiana Blanco, Beatriz
  • Algora del Valle, Carlos
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Crystal Growth
Fecha: Noviembre 2008
Volumen: 310
Materias:
Palabras Clave Informales: A1. Substrates, A1. Surface processes, A3. Metalorganic vapor-phase epitaxy, B2. Semiconducting germanium.
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Frequently,whengrowing III–V semiconductors on germanium substrates, unexpected differences between nominally identical substrates are encountered. Using atomic force microscopy (AFM), we have analysed a set of germanium substrates sharing the same specifications.The substrates come from the same vendor but different results come about in terms of the morphology of the epilayers produced by the same epitaxial routine(i.e. substrateW1 produce depilayers with good morphology while substrate WX produce depilayers with defects). The morphological analysis has been carried out on(a)epiready substrates; (b)samples after a high-temperature bake at 700 1C; and(c)on the samples after a hydride (PH3) annealingat640 1C. In the two first stages all substrates(both W1 and WX) show the same good morphology with RMS roughness below A˚ in all cases. It is in the third stage(annealinginPH3) that the morphology degrades and the differences between the samples become apparent. After phosphine exposureat640 1C, the RMS roughness of both substrates approximately doubles, and their surface appears as full of peaks and valleys on the nanometer scale. Despite the general appearance of the samples being similar, a careful analysis of their surface reveals that the substrates that produce bad morphologies(WX) show higher peaks, and some of their roughness parameters, namely, surface kurtosis and the surface skewness, are considerably degraded.

Más información

ID de Registro: 2725
Identificador DC: http://oa.upm.es/2725/
Identificador OAI: oai:oa.upm.es:2725
Identificador DOI: 10.1016/j.jcrysgro.2008.07.116
URL Oficial: http://www.sciencedirect.com/science?_ob=PublicationURL&_tockey=%23TOC%235302%232008%23996899976%23719054%23FLA%23&_cdi=5302&_pubType=J&_auth=y&_acct=C000047350&_version=1&_urlVersion=0&_userid=885385&md5=a0c7aa47160f5f65f3592654f4a77975
Depositado por: Memoria Investigacion
Depositado el: 05 Abr 2010 09:28
Ultima Modificación: 16 Feb 2015 10:49
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