Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile

Galiana Blanco, Beatriz and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and García Vara, Iván (2008). Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3033398.

Description

Title: Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile
Author/s:
  • Galiana Blanco, Beatriz
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • García Vara, Iván
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: December 2008
ISSN: 0021-8979
Volume: 104
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The incorporation of Te into the crystal lattice, when it is used as an n-type dopant for GaAs grown by metalorganic vapor phase epitaxy, is studied. For this purpose, several growth temperatures, total pressures, growth rates, and substrate misorientations have been analyzed, from which it is concluded that depending on the substrate misorientation and total pressure used, the Te behaves like a volatile dopant or a nonvolatile dopant as result of the enhancement or minimization of its adsorption onto the growth surface.

More information

Item ID: 2727
DC Identifier: http://oa.upm.es/2727/
OAI Identifier: oai:oa.upm.es:2727
DOI: 10.1063/1.3033398
Official URL: http://jap.aip.org/japiau/v104/i11
Deposited by: Memoria Investigacion
Deposited on: 05 Apr 2010 08:04
Last Modified: 16 Feb 2015 10:07
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