Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy

Ibáñez Insa, Jordi and Domènech Hernández, Sònia and Alarcón-Lladó, Esther and Cuscó Cornet, Ramón and Artús Surroca, Lluis and Novikov, S.V. and Foxon, C.T. and Calleja Pardo, Enrique (2008). Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 3); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2968242.

Description

Title: Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy
Author/s:
  • Ibáñez Insa, Jordi
  • Domènech Hernández, Sònia
  • Alarcón-Lladó, Esther
  • Cuscó Cornet, Ramón
  • Artús Surroca, Lluis
  • Novikov, S.V.
  • Foxon, C.T.
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: August 2008
ISSN: 0021-8979
Volume: 104
Subjects:
Freetext Keywords: GaN; AlN; AlGaN; molecular beam epitaxy
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and AlxGa1−xN (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy

More information

Item ID: 2747
DC Identifier: http://oa.upm.es/2747/
OAI Identifier: oai:oa.upm.es:2747
DOI: 10.1063/1.2968242
Official URL: http://jap.aip.org/japiau/v104/i3
Deposited by: Memoria Investigacion
Deposited on: 26 Mar 2010 09:22
Last Modified: 20 Apr 2016 12:25
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