Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

Ulloa Herrero, José María and Koenraad, P.M. and Fuster, David and González Soto, Luisa and González Diez, M. Yolanda and Gonzalez, M.U (2008). Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires. "Nanotechnology", v. 19 (n. 44); pp.. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/19/44/445601.

Description

Title: Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires
Author/s:
  • Ulloa Herrero, José María
  • Koenraad, P.M.
  • Fuster, David
  • González Soto, Luisa
  • González Diez, M. Yolanda
  • Gonzalez, M.U
Item Type: Article
Título de Revista/Publicación: Nanotechnology
Date: November 2008
ISSN: 0957-4484
Volume: 19
Subjects:
Faculty: E.T.S.I. Aeronáuticos (UPM)
Department: Aerotecnia [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.

More information

Item ID: 2773
DC Identifier: http://oa.upm.es/2773/
OAI Identifier: oai:oa.upm.es:2773
DOI: 10.1088/0957-4484/19/44/445601
Official URL: http://iopscience.iop.org/0957-4484/19/44/445601/
Deposited by: Memoria Investigacion
Deposited on: 08 Apr 2010 08:12
Last Modified: 12 Feb 2015 13:59
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