Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

Ishikawa, Fumitario and Fernández González, Alvaro de Guzmán and Brandt, Oliver and Trampert, Achim and Ploog, K.H. (2008). Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3031652.

Description

Title: Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
Author/s:
  • Ishikawa, Fumitario
  • Fernández González, Alvaro de Guzmán
  • Brandt, Oliver
  • Trampert, Achim
  • Ploog, K.H.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: December 2008
Volume: 104
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Using photoluminescence (PL) spectroscopy, we carry out a comparative study of the optical properties of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells. The incorporation of Sb into (Ga,In)(N,As) results in a reduced quantum efficiency at low temperatures but an improved one at room temperature (RT). A PL line shape analysis as well as the temperature dependence of the PL peak energy reveals the existence of band-tail localized states in both material systems. The carrier localization energy is larger for (Ga,In)(N,As,Sb) than for (Ga,In)(N,As), leading to a longer radiative lifetime and thus a reduced quantum efficiency at low temperatures for the former material. The thermal quenching of the quantum efficiency is analyzed by a rate equation model, which shows that the density of nonradiative centers is reduced in (Ga,In)(N,As,Sb) resulting in an enhanced quantum efficiency at RT.

More information

Item ID: 2777
DC Identifier: http://oa.upm.es/2777/
OAI Identifier: oai:oa.upm.es:2777
DOI: 10.1063/1.3031652
Official URL: http://jap.aip.org/japiau/v104/i11
Deposited by: Memoria Investigacion
Deposited on: 08 Apr 2010 11:43
Last Modified: 20 Apr 2016 12:26
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