UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix

Prieto Colorado, Ángel Carmelo and Torres Pérez, Alfredo and Jiménez López, Juan Ignacio and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Rodríguez Rodríguez, Tomás (2008). UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix. "Journal of Materials Science Materials in Electronics", v. 19 (n. 2); pp. 155-159. ISSN 0957-4522. https://doi.org/10.1007/s10854-007-9304-7.

Description

Title: UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix
Author/s:
  • Prieto Colorado, Ángel Carmelo
  • Torres Pérez, Alfredo
  • Jiménez López, Juan Ignacio
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Rodríguez Rodríguez, Tomás
Item Type: Article
Título de Revista/Publicación: Journal of Materials Science Materials in Electronics
Date: February 2008
Volume: 19
Subjects:
Freetext Keywords: UV Raman, nanocrystals, SiO2 matrix.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Nanostructures of both Ge nanocrystals formed by thermal oxidation of SiGe layers, and SiGe nanocrystals formed by crystallization of amorphous SiGe nanoparticles deposited by LPCVD have been analyzed by Raman spectroscopy. The nanostructures are formed on a silicon substrate. Raman spectra have been acquired with visible (514.5 nm) and UV (325 nm) excitation lines. When the amount of material is very small, as it has happens in these nanostructures, the visible line is not able to excite the characteristic peaks of the Ge or SiGe in the Raman spectrum; instead the Si second order spectrum of the substrate appears and it can be misinterpreted by attributing it to the Ge–Ge band associated with the nanocrystals. In this work, the use of UV excitation has been demonstrated to enhance the sensitivity respect to the conventional visible excitation, allowing the characteristic peaks of the Ge or SiGe nanocrystals to appear in the spectrum. We attributed this effect to the resonance effects.

More information

Item ID: 2787
DC Identifier: http://oa.upm.es/2787/
OAI Identifier: oai:oa.upm.es:2787
DOI: 10.1007/s10854-007-9304-7
Official URL: http://www.springer.com/materials/optical+&+electronic+materials/journal/10854
Deposited by: Memoria Investigacion
Deposited on: 08 Apr 2010 08:45
Last Modified: 20 Apr 2016 12:26
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