Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo Resa, Pablo Aitor and Suárez Arias, Ferran and Sanz Hervás, Alfredo and Sangrador García, Jesús and Fonstad, C. G. (2008). Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy. "Journal of Applied Physics", v. 103 (n. 1); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2824967.

Description

Title: Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Author/s:
  • Postigo Resa, Pablo Aitor
  • Suárez Arias, Ferran
  • Sanz Hervás, Alfredo
  • Sangrador García, Jesús
  • Fonstad, C. G.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: June 2008
ISSN: 0021-8979
Volume: 103
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H∗). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H∗ were used; after this, the growth proceeded without H∗ while the temperature was increased slowly with time. The incorporation of H∗ drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.

More information

Item ID: 2789
DC Identifier: http://oa.upm.es/2789/
OAI Identifier: oai:oa.upm.es:2789
DOI: 10.1063/1.2824967
Official URL: http://jap.aip.org/japiau/v103/i1
Deposited by: Memoria Investigacion
Deposited on: 07 Apr 2010 11:58
Last Modified: 20 Apr 2016 12:26
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