Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo Resa, Pablo Aitor; Suárez Arias, Ferran; Sanz Hervás, Alfredo; Sangrador García, Jesús y Fonstad, C. G. (2008). Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy. "Journal of Applied Physics", v. 103 (n. 1); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2824967.

Descripción

Título: Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Autor/es:
  • Postigo Resa, Pablo Aitor
  • Suárez Arias, Ferran
  • Sanz Hervás, Alfredo
  • Sangrador García, Jesús
  • Fonstad, C. G.
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: Junio 2008
Volumen: 103
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H∗). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H∗ were used; after this, the growth proceeded without H∗ while the temperature was increased slowly with time. The incorporation of H∗ drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.

Más información

ID de Registro: 2789
Identificador DC: http://oa.upm.es/2789/
Identificador OAI: oai:oa.upm.es:2789
Identificador DOI: 10.1063/1.2824967
URL Oficial: http://jap.aip.org/japiau/v103/i1
Depositado por: Memoria Investigacion
Depositado el: 07 Abr 2010 11:58
Ultima Modificación: 20 Abr 2016 12:26
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