Growth of Nitrogen-Doped Mg~xZn~1~-~xO for Use in Visible Rejection Photodetectors

Nakamura, A. and Aoshima, T. and Hayashi, T and Gangil, S. and Temmyo, J. and Navarro Tobar, Álvaro and Pereiro Viterbo, Juan and Muñoz Merino, Elias (2008). Growth of Nitrogen-Doped Mg~xZn~1~-~xO for Use in Visible Rejection Photodetectors. "Journal of The Korean Physical Society", v. 53 (n. 5); pp. 2909-2912. ISSN 0374-4884. https://doi.org/10.3938/jkps.53.2909.

Description

Title: Growth of Nitrogen-Doped Mg~xZn~1~-~xO for Use in Visible Rejection Photodetectors
Author/s:
  • Nakamura, A.
  • Aoshima, T.
  • Hayashi, T
  • Gangil, S.
  • Temmyo, J.
  • Navarro Tobar, Álvaro
  • Pereiro Viterbo, Juan
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: Journal of The Korean Physical Society
Date: November 2008
Volume: 53
Subjects:
Freetext Keywords: Schottky contact, UV detector, I-V characteristics, C-V, MgZnO
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Improvement in the Schottky behavior of metal (Au) contacts with Mg0.01Zn0.99O and Mg0.01Zn0.99O:N thin films were observed by treating the films with hydrogen peroxide (H2O2) (dipping of samples in H2O2 at 100 _C for 3 min). Contacts formed on untreated film showed Ohmic behavior in the current-voltage (I-V ) measurements. The H2O2 treatment led to a smooth surface morphology for the films and resulted in Schottky contact of Au fabricated on the treated films with barrier heights of 0.82≈0.85 eV. The absolute current density at a reverse bias of 3 V was 1≈6 × 10−6 A/cm2 for Au contacts on H2O2-treated films. The treated films showed lower electron concentration than the untreated films due to removal of the relatively high conducting top layers of the thin films. A metal-semiconductor-metal (MSM) detector was fabricated using a Mg0.05Zn0.95O:N film and was characterized for its spectral response.

More information

Item ID: 2823
DC Identifier: http://oa.upm.es/2823/
OAI Identifier: oai:oa.upm.es:2823
DOI: 10.3938/jkps.53.2909
Official URL: http://jkps.kps.or.kr/home/journal/library/highlight.asp?globalmenu=3&localmenu=15
Deposited by: Memoria Investigacion
Deposited on: 28 Apr 2010 12:19
Last Modified: 06 Oct 2014 17:04
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