Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Alvaro del and García Hemme, Eric and García Hernansanz, Rodrigo and Mártil de la Plaza, Ignacio and González Díaz, Germán (2013). Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. "Journal of Applied Physics", v. 114 (n. 5); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4817254.

Description

Title: Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Author/s:
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: August 2013
ISSN: 0021-8979
Volume: 114
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

More information

Item ID: 29066
DC Identifier: http://oa.upm.es/29066/
OAI Identifier: oai:oa.upm.es:29066
DOI: 10.1063/1.4817254
Official URL: http://scitation.aip.org/content/aip/journal/jap/114/5/10.1063/1.4817254?ver=pdfcov
Deposited by: Memoria Investigacion
Deposited on: 07 Jun 2014 12:06
Last Modified: 22 Sep 2014 11:44
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