Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Olea Ariza, Javier; Pastor Pastor, David; Prado Millán, Alvaro del; García Hemme, Eric; García Hernansanz, Rodrigo; Mártil de la Plaza, Ignacio y González Díaz, Germán (2013). Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. "Journal of Applied Physics", v. 114 (n. 5); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4817254.

Descripción

Título: Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Autor/es:
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: Agosto 2013
Volumen: 114
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

Más información

ID de Registro: 29066
Identificador DC: http://oa.upm.es/29066/
Identificador OAI: oai:oa.upm.es:29066
Identificador DOI: 10.1063/1.4817254
URL Oficial: http://scitation.aip.org/content/aip/journal/jap/114/5/10.1063/1.4817254?ver=pdfcov
Depositado por: Memoria Investigacion
Depositado el: 07 Jun 2014 12:06
Ultima Modificación: 22 Sep 2014 11:44
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