Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications

Morón Fernández, Carlos and García García, Alfonso and Tremps Guerra, Enrique and Somolinos Sánchez, José Andrés (2013). Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications. "Key Engineering Materials", v. 543 ; pp. 167-170. ISSN 1013-9826. https://doi.org/10.4028/www.scientific.net/KEM.543.167.

Description

Title: Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications
Author/s:
  • Morón Fernández, Carlos
  • García García, Alfonso
  • Tremps Guerra, Enrique
  • Somolinos Sánchez, José Andrés
Item Type: Article
Título de Revista/Publicación: Key Engineering Materials
Date: March 2013
ISSN: 1013-9826
Volume: 543
Subjects:
Freetext Keywords: Anisotropic, magnetoresistance, bilayer
Faculty: E.T.S.I. Navales (UPM)
Department: Sistemas Oceánicos y Navales [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive(AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

More information

Item ID: 29145
DC Identifier: http://oa.upm.es/29145/
OAI Identifier: oai:oa.upm.es:29145
DOI: 10.4028/www.scientific.net/KEM.543.167
Official URL: http://www.scientific.net/KEM.543.167
Deposited by: Memoria Investigacion
Deposited on: 14 Jul 2014 16:54
Last Modified: 11 May 2020 08:03
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