Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

Anaya, J.J. and Torres, A. and Prieto, C. and Jiménez, J. and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás (2013). Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires. "International Journal of Nanoparticles", v. 6 (n. 2/3); pp. 103-112. ISSN 1753-2507. https://doi.org/10.1504/IJNP.2013.054985.

Description

Title: Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires
Author/s:
  • Anaya, J.J.
  • Torres, A.
  • Prieto, C.
  • Jiménez, J.
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
Item Type: Article
Título de Revista/Publicación: International Journal of Nanoparticles
Date: 2013
ISSN: 1753-2507
Volume: 6
Subjects:
Freetext Keywords: Silicon nanowires; Raman spectroscopy; thermal conductivity; laser heating; phonons; laser beams; semiconductor nanowires; nanotechnology; temperature distribution
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (FEM). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterisation of NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NW's diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectrum of Si NWs. It is demonstrated that the temperature increase induced by the laser beam plays a major role in shaping the Raman spectrum of Si NWs.

More information

Item ID: 29201
DC Identifier: http://oa.upm.es/29201/
OAI Identifier: oai:oa.upm.es:29201
DOI: 10.1504/IJNP.2013.054985
Official URL: http://www.inderscience.com/info/inarticle.php?artid=54985
Deposited by: Memoria Investigacion
Deposited on: 09 Jul 2014 18:29
Last Modified: 19 Nov 2014 16:25
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