Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

Anaya, J.J.; Torres, A.; Prieto, C.; Jiménez, J.; Rodríguez Domínguez, Andrés y Rodríguez Rodríguez, Tomás (2013). Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires. "International Journal of Nanoparticles", v. 6 (n. 2/3); pp. 103-112. ISSN 1753-2507. https://doi.org/10.1504/IJNP.2013.054985.

Descripción

Título: Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires
Autor/es:
  • Anaya, J.J.
  • Torres, A.
  • Prieto, C.
  • Jiménez, J.
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
Tipo de Documento: Artículo
Título de Revista/Publicación: International Journal of Nanoparticles
Fecha: 2013
Volumen: 6
Materias:
Palabras Clave Informales: Silicon nanowires; Raman spectroscopy; thermal conductivity; laser heating; phonons; laser beams; semiconductor nanowires; nanotechnology; temperature distribution
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (FEM). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterisation of NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NW's diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectrum of Si NWs. It is demonstrated that the temperature increase induced by the laser beam plays a major role in shaping the Raman spectrum of Si NWs.

Más información

ID de Registro: 29201
Identificador DC: http://oa.upm.es/29201/
Identificador OAI: oai:oa.upm.es:29201
Identificador DOI: 10.1504/IJNP.2013.054985
URL Oficial: http://www.inderscience.com/info/inarticle.php?artid=54985
Depositado por: Memoria Investigacion
Depositado el: 09 Jul 2014 18:29
Ultima Modificación: 19 Nov 2014 16:25
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