Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals

Mass, J.; Avella Romero, Manuel; Jiménez López, Juan Ignacio; Rodríguez Domínguez, Andrés; Rodríguez Rodríguez, Tomás; Callahan, M.; Bliss, D. y Wang, Buguo (2008). Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals. "Journal of Crystal Growth", v. 310 (n. 5); pp. 1000-1005. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2007.11.095.

Descripción

Título: Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals
Autor/es:
  • Mass, J.
  • Avella Romero, Manuel
  • Jiménez López, Juan Ignacio
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
  • Callahan, M.
  • Bliss, D.
  • Wang, Buguo
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Crystal Growth
Fecha: Marzo 2008
Volumen: 310
Materias:
Palabras Clave Informales: A1. Cathodoluminescence; A1. Defects; B1. ZnO bulk
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

ZnO is a wide bandgap semiconductor with very promising expectation for UV optoelectronics. The existence of large crystals should allow homoepitaxial growth of ZnO films for advanced optoelectronic devices. However, the ZnO substrates are not yet mature. Both defect induced by growth and by polishing together with the high reactivity of the surface are problems to their industrial application. Cathodoluminescence (CL) was used to probe the quality of substrates from two different suppliers. The surface damage was studied by varying the penetration depth of the electron beam, allowing to observe significant differences between the two samples within a 0.5-mm-thick surface layer. CL spectra show a complex band (P1) at _3.3 eV composed of two overlapped bands (3.31 and 3.29 eV) related to point defects (PD) and the 1-LO phonon replica of the free exciton (FX-1LO). This band (P1) is shown to be very sensitive to the presence of defects and the surface and thermal treatments. Its intensity compared with the excitonic band intensity is demonstrated to provide criteria about the quality of the substrates.

Más información

ID de Registro: 2940
Identificador DC: http://oa.upm.es/2940/
Identificador OAI: oai:oa.upm.es:2940
Identificador DOI: 10.1016/j.jcrysgro.2007.11.095
URL Oficial: http://www.elsevier.com/wps/find/journaldescription.cws_home/505670/description#description
Depositado por: Memoria Investigacion
Depositado el: 06 May 2010 11:41
Ultima Modificación: 20 Abr 2016 12:33
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