Cucak, Dejana and Vasic, Miroslav and García Suárez, Oscar and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Tadjer, Marko Jak and Calle Gómez, Fernando and Benkhelifa, F. and Reiner, R. and Waltereit, P. and Müller, S.
Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier.
In: "Seminario Anual de Automática, Electrónica Industrial e Instrumentación 2013 (SAAEI'13)", 10/07/2013 - 12/07/2013, Madrid, Spain. p. 5.
In this paper, implementation and testing of non-
commercial GaN HEMT in a simple buck converter for
envelope amplifier in ET and EER transmission techn
iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up
to 25MHz. 64QAM signal with 1MHz of large signal bandw
idth and 10.5dB of Peak to Average Power Ratio was gener
ated, using the switching frequency of 20MHz. The obtaine
defficiency was 38% including the driving circuit an
d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular