Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

Cucak, Dejana and Vasic, Miroslav and García Suárez, Oscar and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Tadjer, Marko Jak and Calle Gómez, Fernando and Benkhelifa, F. and Reiner, R. and Waltereit, P. and Müller, S. (2013). Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier. In: "Seminario Anual de Automática, Electrónica Industrial e Instrumentación 2013 (SAAEI'13)", 10/07/2013 - 12/07/2013, Madrid, Spain. p. 5.

Description

Title: Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier
Author/s:
  • Cucak, Dejana
  • Vasic, Miroslav
  • García Suárez, Oscar
  • Oliver Ramírez, Jesús Angel
  • Alou Cervera, Pedro
  • Cobos Márquez, José Antonio
  • Tadjer, Marko Jak
  • Calle Gómez, Fernando
  • Benkhelifa, F.
  • Reiner, R.
  • Waltereit, P.
  • Müller, S.
Item Type: Presentation at Congress or Conference (Article)
Event Title: Seminario Anual de Automática, Electrónica Industrial e Instrumentación 2013 (SAAEI'13)
Event Dates: 10/07/2013 - 12/07/2013
Event Location: Madrid, Spain
Title of Book: Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier
Date: 2013
Subjects:
Faculty: Centro de Electrónica Industrial (CEI) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was gener ated, using the switching frequency of 20MHz. The obtaine defficiency was 38% including the driving circuit an d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular application.

More information

Item ID: 29515
DC Identifier: http://oa.upm.es/29515/
OAI Identifier: oai:oa.upm.es:29515
Official URL: http://www.saaei.org/edicion13/
Deposited by: Memoria Investigacion
Deposited on: 25 Apr 2015 11:50
Last Modified: 25 Apr 2015 11:50
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