A 0.0016 mm(2) 0.64 nJ leakage-based CMOS temperature sensor

Ituero Herrero, Pablo and López Vallejo, Marisa and López Barrio, Carlos Alberto (2013). A 0.0016 mm(2) 0.64 nJ leakage-based CMOS temperature sensor. "Sensors", v. 13 (n. 9); pp. 12648-12662. ISSN 1424-8220. https://doi.org/10.3390/s130912648.

Description

Title: A 0.0016 mm(2) 0.64 nJ leakage-based CMOS temperature sensor
Author/s:
  • Ituero Herrero, Pablo
  • López Vallejo, Marisa
  • López Barrio, Carlos Alberto
Item Type: Article
Título de Revista/Publicación: Sensors
Date: September 2013
ISSN: 1424-8220
Volume: 13
Subjects:
Freetext Keywords: Temperature sensor; CMOS; ratio-based; leakage; DTM (Dynamic Thermal Management)
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a transistor in the subthreshold regime. Furthermore, a novel charging mechanism for the capacitor is proposed to further increase the robustness against fabrication variability. The sensor, including digitization and interfacing, occupies 0.0016 mm2 and has an energy consumption of 47.7–633 pJ per sample. The resolution of the sensor is 0.28 °C, and the 3σ inaccuracy over the range 40–110 °C is 1.17 °C.

More information

Item ID: 29526
DC Identifier: http://oa.upm.es/29526/
OAI Identifier: oai:oa.upm.es:29526
DOI: 10.3390/s130912648
Official URL: http://www.mdpi.com/1424-8220/13/9/12648
Deposited by: Memoria Investigacion
Deposited on: 24 Jun 2014 19:12
Last Modified: 21 Apr 2016 23:56
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