Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

García-Linares Fontes, Pablo; López Estrada, Esther; Ramiro Gonzalez, Iñigo; Datas Medina, Alejandro; Antolín Fernández, Elisa; Shoji, Y.; Sogabe, T.; Okada, Y.; Martí Vega, Antonio y Luque López, Antonio (2015). Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept. "Solar Energy Materials and Solar Cells", v. 132 ; pp. 178-182. https://doi.org/10.1016/j.solmat.2014.08.041.

Descripción

Título: Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept
Autor/es:
  • García-Linares Fontes, Pablo
  • López Estrada, Esther
  • Ramiro Gonzalez, Iñigo
  • Datas Medina, Alejandro
  • Antolín Fernández, Elisa
  • Shoji, Y.
  • Sogabe, T.
  • Okada, Y.
  • Martí Vega, Antonio
  • Luque López, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Enero 2015
Volumen: 132
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Ninguna

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Resumen

Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7283798NGCPVAntonio LuqueA new generation of concentrator photovoltaic cells, modules and systems

Más información

ID de Registro: 31133
Identificador DC: http://oa.upm.es/31133/
Identificador OAI: oai:oa.upm.es:31133
Identificador DOI: 10.1016/j.solmat.2014.08.041
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024814004644
Depositado por: Prof. Antonio Luque López
Depositado el: 01 Oct 2014 07:53
Ultima Modificación: 01 Jul 2015 22:56
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