Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

García-Linares Fontes, Pablo and López Estrada, Esther and Ramiro Gonzalez, Iñigo and Datas Medina, Alejandro and Antolín Fernández, Elisa and Shoji, Y. and Sogabe, T. and Okada, Y. and Martí Vega, Antonio and Luque López, Antonio (2015). Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept. "Solar Energy Materials and Solar Cells", v. 132 ; pp. 178-182. https://doi.org/10.1016/j.solmat.2014.08.041.

Description

Title: Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept
Author/s:
  • García-Linares Fontes, Pablo
  • López Estrada, Esther
  • Ramiro Gonzalez, Iñigo
  • Datas Medina, Alejandro
  • Antolín Fernández, Elisa
  • Shoji, Y.
  • Sogabe, T.
  • Okada, Y.
  • Martí Vega, Antonio
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: January 2015
Volume: 132
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: None

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Abstract

Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7283798NGCPVAntonio LuqueA new generation of concentrator photovoltaic cells, modules and systems
Government of SpainEEBB-BES-2010–037659UnspecifiedUnspecifiedAyudas para la Formación de Personal Investigador (FPI)

More information

Item ID: 31133
DC Identifier: http://oa.upm.es/31133/
OAI Identifier: oai:oa.upm.es:31133
DOI: 10.1016/j.solmat.2014.08.041
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024814004644
Deposited by: Prof. Antonio Luque López
Deposited on: 01 Oct 2014 07:53
Last Modified: 30 May 2019 14:01
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