Case study in failure analysis of accelerated life tests (ALT) on III-V commercial triple-junction concentrator solar cells

Espinet González, Pilar; Romero, R.; Orlando Carrillo, Vincenzo; Gabás, M.; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Palanco, S.; Bijani, S.; Contreras, Y.; Galiana Blanco, Beatriz; Algora del Valle, Carlos y Araki, Kenji (2013). Case study in failure analysis of accelerated life tests (ALT) on III-V commercial triple-junction concentrator solar cells. En: "39th Photovoltaic Specialists Conference (PVSC)", 16/06/2013 - 21/06/2013, Tampa, Florida. pp. 1666-1671. https://doi.org/10.1109/PVSC.2013.6744465.

Descripción

Título: Case study in failure analysis of accelerated life tests (ALT) on III-V commercial triple-junction concentrator solar cells
Autor/es:
  • Espinet González, Pilar
  • Romero, R.
  • Orlando Carrillo, Vincenzo
  • Gabás, M.
  • Nuñez Mendoza, Neftali
  • Vázquez López, Manuel
  • Palanco, S.
  • Bijani, S.
  • Contreras, Y.
  • Galiana Blanco, Beatriz
  • Algora del Valle, Carlos
  • Araki, Kenji
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 39th Photovoltaic Specialists Conference (PVSC)
Fechas del Evento: 16/06/2013 - 21/06/2013
Lugar del Evento: Tampa, Florida
Título del Libro: 39th Photovoltaic Specialists Conference (PVSC)
Fecha: 2013
Materias:
Palabras Clave Informales: Accelerated life test, ALT, characterization, concentrator, CPV, failure analysis, reliability, solar cells
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work the failure analysis carried out in III-V concentrator multijunction solar cells after a temperature accelerated life test is presented. All the failures appeared have been catastrophic since all the solar cells turned into low shunt resistances. A case study in failure analysis based on characterization by optical microscope, SEM, EDX, EQE and XPS is presented in this paper, revealing metal deterioration in the bus bar and fingers as well as cracks in the semiconductor structure beneath or next to the bus bar. In fact, in regions far from the bus bar the semiconductor structure seems not to be damaged. SEM images have dismissed the presence of metal spikes inside the solar cell structure. Therefore, we think that for these particular solar cells, failures appear mainly as a consequence of a deficient electrolytic growth of the front metallization which also results in failures in the semiconductor structure close to the bus bars.

Más información

ID de Registro: 32248
Identificador DC: http://oa.upm.es/32248/
Identificador OAI: oai:oa.upm.es:32248
Identificador DOI: 10.1109/PVSC.2013.6744465
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6744465&tag=1
Depositado por: Memoria Investigacion
Depositado el: 22 Oct 2014 18:36
Ultima Modificación: 22 Oct 2014 18:36
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