Double ion implantation and pulsed laser melting processes for third generation solar cells

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Alvaro del and Mártil de la Plaza, Ignacio and Wahnón Benarroch, Perla and Sánchez Noriega, Kefrén and Palacios Clemente, Pablo and González Díaz, Germán (2013). Double ion implantation and pulsed laser melting processes for third generation solar cells. "International Journal of Photoenergy", v. 2013 ; pp. 1-7. ISSN 1110-662X. https://doi.org/10.1155/2013/473196.

Description

Title: Double ion implantation and pulsed laser melting processes for third generation solar cells
Author/s:
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • Mártil de la Plaza, Ignacio
  • Wahnón Benarroch, Perla
  • Sánchez Noriega, Kefrén
  • Palacios Clemente, Pablo
  • González Díaz, Germán
Item Type: Article
Título de Revista/Publicación: International Journal of Photoenergy
Date: 2013
ISSN: 1110-662X
Volume: 2013
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Aeronaves y Vehículos Espaciales
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

More information

Item ID: 33259
DC Identifier: http://oa.upm.es/33259/
OAI Identifier: oai:oa.upm.es:33259
DOI: 10.1155/2013/473196
Official URL: http://www.hindawi.com/journals/ijp/2013/473196/
Deposited by: Memoria Investigacion
Deposited on: 17 Jan 2015 09:38
Last Modified: 17 Jan 2015 09:38
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