Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

Orellana Pérez, T.; Funke, Claudia; Futterer, W.; Riepe, S.; Möller, H.J.; Tejado Garrido, Elena Maria y Pastor Caño, Jose Ignacio (2011). Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon. En: "26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC", 05/09/2011 - 09/09/2011, Hamburg, Germany. ISBN 3-936338-27-2. pp. 1864-1870. https://doi.org/10.4229/26thEUPVSEC2011-2BV.4.23.

Descripción

Título: Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon
Autor/es:
  • Orellana Pérez, T.
  • Funke, Claudia
  • Futterer, W.
  • Riepe, S.
  • Möller, H.J.
  • Tejado Garrido, Elena Maria
  • Pastor Caño, Jose Ignacio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC
Fechas del Evento: 05/09/2011 - 09/09/2011
Lugar del Evento: Hamburg, Germany
Título del Libro: Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition. EU PVSEC 2011 (Hamburg)
Fecha: 2011
ISBN: 3-936338-27-2
Materias:
Palabras Clave Informales: c-Si, Crystallisation, Crystallization, Mechanical Strength
Escuela: E.T.S.I. Caminos, Canales y Puertos (UPM)
Departamento: Ciencia de los Materiales
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

Más información

ID de Registro: 33306
Identificador DC: http://oa.upm.es/33306/
Identificador OAI: oai:oa.upm.es:33306
Identificador DOI: 10.4229/26thEUPVSEC2011-2BV.4.23
URL Oficial: http://www.eupvsec-proceedings.com/proceedings?paper=11328
Depositado por: Memoria Investigacion
Depositado el: 17 Feb 2015 12:52
Ultima Modificación: 17 Feb 2015 12:52
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