Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

Orellana Pérez, T. and Funke, Claudia and Futterer, W. and Riepe, S. and Möller, H.J. and Tejado Garrido, Elena María and Pastor Caño, Jose Ignacio (2011). Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon. In: "26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC", 05/09/2011 - 09/09/2011, Hamburg, Germany. ISBN 3-936338-27-2. pp. 1864-1870. https://doi.org/10.4229/26thEUPVSEC2011-2BV.4.23.

Description

Title: Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon
Author/s:
  • Orellana Pérez, T.
  • Funke, Claudia
  • Futterer, W.
  • Riepe, S.
  • Möller, H.J.
  • Tejado Garrido, Elena María
  • Pastor Caño, Jose Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC
Event Dates: 05/09/2011 - 09/09/2011
Event Location: Hamburg, Germany
Title of Book: Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition. EU PVSEC 2011 (Hamburg)
Date: 2011
ISBN: 3-936338-27-2
Subjects:
Freetext Keywords: c-Si, Crystallisation, Crystallization, Mechanical Strength
Faculty: E.T.S.I. Caminos, Canales y Puertos (UPM)
Department: Ciencia de los Materiales
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

More information

Item ID: 33306
DC Identifier: http://oa.upm.es/33306/
OAI Identifier: oai:oa.upm.es:33306
DOI: 10.4229/26thEUPVSEC2011-2BV.4.23
Official URL: http://www.eupvsec-proceedings.com/proceedings?paper=11328
Deposited by: Memoria Investigacion
Deposited on: 17 Feb 2015 12:52
Last Modified: 24 Sep 2018 07:47
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