Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell

Ramiro Gonzalez, Iñigo; Antolín Fernández, Elisa; García-Linares Fontes, Pablo; López Estrada, Esther; Artacho Huertas, Irene; Datas Medina, Alejandro; Martí Vega, Antonio y Luque López, Antonio (2014). Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell. En: "40th IEEE Photovoltaic Specialists Conference", 08/06/2014 - 13/06/2014, Denver, Colorado, USA. pp. 3251-3253. https://doi.org/10.1109/pvsc.2014.6925629.

Descripción

Título: Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell
Autor/es:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • García-Linares Fontes, Pablo
  • López Estrada, Esther
  • Artacho Huertas, Irene
  • Datas Medina, Alejandro
  • Martí Vega, Antonio
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 40th IEEE Photovoltaic Specialists Conference
Fechas del Evento: 08/06/2014 - 13/06/2014
Lugar del Evento: Denver, Colorado, USA
Título del Libro: 40th IEEE Photovoltaic Specialists Conference
Fecha: 2014
Materias:
Palabras Clave Informales: Intermediate band solar cells, quantum dots, high-efficiency III-V solar cells, sub-bandgap photocurrent
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

It has been proposed that the use of self-assembled quantum dot (QD) arrays can break the Shockley-Queisser efficiency limit by extending the absorption of solar cells into the low-energy photon range while preserving their output voltage. This would be possible if the infrared photons are absorbed in the two sub-bandgap QD transitions simultaneously and the energy of two photons is added up to produce one single electron-hole pair, as described by the intermediate band model. Here, we present an InAs/Al 0.25Ga 0.75As QD solar cell that exhibits such electrical up-conversion of low-energy photons. When the device is monochromatically illuminated with 1.32 eV photons, open-circuit voltages as high as 1.58 V are measured (for a total gap of 1.8 eV). Moreover, the photocurrent produced by illumination with photons exciting the valence band to intermediate band (VB-IB) and the intermediate band to conduction band (IB-CB) transitions can be both spectrally resolved. The first corresponds to the QD inter-band transition and is observable for photons of energy mayor que 1 eV, and the later corresponds to the QD intra-band transition and peaks around 0.5 eV. The voltage up-conversion process reported here for the first time is the key to the use of the low-energy end of the solar spectrum to increase the conversion efficiency, and not only the photocurrent, of single-junction photovoltaic devices. In spite of the low absorption threshold measured in our devices - 0.25 eV - we report open-circuit voltages at room temperature as high as 1.12 V under concentrated broadband illumination.

Más información

ID de Registro: 33495
Identificador DC: http://oa.upm.es/33495/
Identificador OAI: oai:oa.upm.es:33495
Identificador DOI: 10.1109/pvsc.2014.6925629
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6925629
Depositado por: Memoria Investigacion
Depositado el: 26 Ene 2015 17:14
Ultima Modificación: 26 Ene 2015 17:14
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