Characterization of the manufacturing processes to grow triple-junction solar cells

Kalyuzhnyy, Nikolay A. and Evstropov, V. V. and Lantratov, Vladimir M. and Mintairov, Sergey A. and Mintairov, M. A. and Gudovskikh, Alexander S. and Luque López, Antonio and Andreev, V. M. (2014). Characterization of the manufacturing processes to grow triple-junction solar cells. "International Journal of Photoenergy", v. 2014 ; pp. 1-10. ISSN 1110-662X. https://doi.org/10.1155/2014/836284.

Description

Title: Characterization of the manufacturing processes to grow triple-junction solar cells
Author/s:
  • Kalyuzhnyy, Nikolay A.
  • Evstropov, V. V.
  • Lantratov, Vladimir M.
  • Mintairov, Sergey A.
  • Mintairov, M. A.
  • Gudovskikh, Alexander S.
  • Luque López, Antonio
  • Andreev, V. M.
Item Type: Article
Título de Revista/Publicación: International Journal of Photoenergy
Date: 2014
ISSN: 1110-662X
Volume: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.

More information

Item ID: 35680
DC Identifier: http://oa.upm.es/35680/
OAI Identifier: oai:oa.upm.es:35680
DOI: 10.1155/2014/836284
Official URL: http://www.hindawi.com/journals/ijp/2014/836284/
Deposited by: Memoria Investigacion
Deposited on: 23 Jun 2015 16:55
Last Modified: 23 Jun 2015 16:55
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