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Bengoechea Encabo, Ana and Albert, Steven and López-Romero Moraleda, David and Lefebvre, P. and Barbagini, Francesca and Torres Pardo, Almudena and González Calbet, José María and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2014). Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range. "Nanotechnology", v. 25 (n. 43); pp.. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/25/43/435203.
Title: | Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Nanotechnology |
Date: | October 2014 |
ISSN: | 0957-4484 |
Volume: | 25 |
Subjects: | |
Freetext Keywords: | InGaN, nanocolumns, LED, SAG |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.
Type | Code | Acronym | Leader | Title |
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FP7 | 280694 | GECCO | TECHNISCHE UNIVERSITAET BRAUNSCHWEIG | 3D GaN for High Efficiency Solid State Lighting |
Government of Spain | MAT2011-26703 | Unspecified | Universidad Politécnica de Madrid | CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES Y FABRICADAS POR MBE SOBRE SUSTRATOS DE SILICIO Y CAPAS DE GAN |
Item ID: | 35715 |
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DC Identifier: | http://oa.upm.es/35715/ |
OAI Identifier: | oai:oa.upm.es:35715 |
DOI: | 10.1088/0957-4484/25/43/435203 |
Official URL: | http://iopscience.iop.org/0957-4484/25/43/435203/article |
Deposited by: | Memoria Investigacion |
Deposited on: | 22 Jun 2015 16:47 |
Last Modified: | 05 Jun 2019 08:22 |