Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

Bengoechea Encabo, Ana and Albert, Steven and López-Romero Moraleda, David and Lefebvre, P. and Barbagini, Francesca and Torres Pardo, Almudena and González Calbet, José María and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2014). Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range. "Nanotechnology", v. 25 (n. 43); pp.. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/25/43/435203.

Description

Title: Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
Author/s:
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • López-Romero Moraleda, David
  • Lefebvre, P.
  • Barbagini, Francesca
  • Torres Pardo, Almudena
  • González Calbet, José María
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Nanotechnology
Date: October 2014
ISSN: 0957-4484
Volume: 25
Subjects:
Freetext Keywords: InGaN, nanocolumns, LED, SAG
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7280694GECCOTECHNISCHE UNIVERSITAET BRAUNSCHWEIG3D GaN for High Efficiency Solid State Lighting
Government of SpainMAT2011-26703UnspecifiedUniversidad Politécnica de MadridCELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES Y FABRICADAS POR MBE SOBRE SUSTRATOS DE SILICIO Y CAPAS DE GAN

More information

Item ID: 35715
DC Identifier: http://oa.upm.es/35715/
OAI Identifier: oai:oa.upm.es:35715
DOI: 10.1088/0957-4484/25/43/435203
Official URL: http://iopscience.iop.org/0957-4484/25/43/435203/article
Deposited by: Memoria Investigacion
Deposited on: 22 Jun 2015 16:47
Last Modified: 05 Jun 2019 08:22
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