Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Leonard, E.; Arzel, L.; Tomassini, M.; Zabierowski, P.; Fuertes Marrón, David y Barreau, Nicolas (2014). Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics. "Journal of Applied Physics", v. 116 (n. 7); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4891478.

Descripción

Título: Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics
Autor/es:
  • Leonard, E.
  • Arzel, L.
  • Tomassini, M.
  • Zabierowski, P.
  • Fuertes Marrón, David
  • Barreau, Nicolas
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: Agosto 2014
Volumen: 116
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Más información

ID de Registro: 35766
Identificador DC: http://oa.upm.es/35766/
Identificador OAI: oai:oa.upm.es:35766
Identificador DOI: 10.1063/1.4891478
URL Oficial: http://scitation.aip.org/content/aip/journal/jap/116/7/10.1063/1.4891478
Depositado por: Memoria Investigacion
Depositado el: 23 Nov 2015 18:06
Ultima Modificación: 23 Nov 2015 18:06
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