Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Leonard, E. and Arzel, L. and Tomassini, M. and Zabierowski, P. and Fuertes Marrón, David and Barreau, Nicolas (2014). Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics. "Journal of Applied Physics", v. 116 (n. 7); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4891478.

Description

Title: Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics
Author/s:
  • Leonard, E.
  • Arzel, L.
  • Tomassini, M.
  • Zabierowski, P.
  • Fuertes Marrón, David
  • Barreau, Nicolas
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: August 2014
ISSN: 0021-8979
Volume: 116
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (955kB) | Preview

Abstract

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

More information

Item ID: 35766
DC Identifier: http://oa.upm.es/35766/
OAI Identifier: oai:oa.upm.es:35766
DOI: 10.1063/1.4891478
Official URL: http://scitation.aip.org/content/aip/journal/jap/116/7/10.1063/1.4891478
Deposited by: Memoria Investigacion
Deposited on: 23 Nov 2015 18:06
Last Modified: 23 Nov 2015 18:06
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM