Demonstration and Analysis of the Photocurrent by absorption of two sub-bandgap photons in a quantum dot intermediate band solar cell

Antolín Fernández, Elisa; Martí Vega, Antonio; García-Linares Fontes, Pablo; Cánovas Díaz, Enrique; Fuertes Marrón, David; Luque López, Antonio; Farmer, C.D. y Stanley, Colin (2008). Demonstration and Analysis of the Photocurrent by absorption of two sub-bandgap photons in a quantum dot intermediate band solar cell. En: "23rd European Photovoltaic Solar Energy Conference", 01/09/2008-05/09/2008, Valencia, España. ISBN 3-936338-24-8.

Descripción

Título: Demonstration and Analysis of the Photocurrent by absorption of two sub-bandgap photons in a quantum dot intermediate band solar cell
Autor/es:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • García-Linares Fontes, Pablo
  • Cánovas Díaz, Enrique
  • Fuertes Marrón, David
  • Luque López, Antonio
  • Farmer, C.D.
  • Stanley, Colin
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 23rd European Photovoltaic Solar Energy Conference
Fechas del Evento: 01/09/2008-05/09/2008
Lugar del Evento: Valencia, España
Título del Libro: CD-ROM Proceedings of the 23rd European Photovoltaic Solar Energy Conference
Fecha: 2008
ISBN: 3-936338-24-8
Materias:
Palabras Clave Informales: High Efficiency; Intermediate Band; Quantum Dots
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In order to surpass the efficiency limit of single gap solar cells, intermediate band solar cells (IBSC) have to fulfill two requirements: the production of extra photocurrent by absorption of sub-bandgap photons in electronic transitions involving the intermediate band (IB) and the preservation of a high output voltage, not limited by the existence of this band. This work presents experimental evidence of the production of electron-hole pairs by absorption of two sub-bandgap photons in IBSC prototypes fabricated with InAs/GaAs QD material. The experiments were carried out at low temperatures using a specifically designed modulated photocurrent measurement set-up with two light beams. The results are analysed with the help of a simple equivalent circuit model. This analysis is also used to highlight the relevance of the two-photon mechanism demonstrated in the experiment. It is discussed that, although the absorption of sub-bandgap photons in one of the IB transitions and subsequent thermal escape of carriers is a sufficient mechanism to obtain a photocurrent enhancement, the absorption of sub-bandgap photons in both transitions involving the IB is a requisite for the voltage preservation in IBSCs.

Más información

ID de Registro: 3578
Identificador DC: http://oa.upm.es/3578/
Identificador OAI: oai:oa.upm.es:3578
Depositado por: Memoria Investigacion
Depositado el: 01 Abr 2011 09:50
Ultima Modificación: 20 Abr 2016 13:06
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