Optical Characterization of Quantum Dot Intermediate Band Solar Cells

Cánovas Díaz, Enrique; Martí Vega, Antonio; Fuertes Marrón, David; Antolín Fernández, Elisa; García-Linares Fontes, Pablo; Luque López, Antonio; Farmer, C.D. y Stanley, Colin (2009). Optical Characterization of Quantum Dot Intermediate Band Solar Cells. En: "23rd European Photovoltaic Solar Energy Conference", 01/09/2008-05/09/2008, Valencia, España. ISBN 3-936338-24-8.

Descripción

Título: Optical Characterization of Quantum Dot Intermediate Band Solar Cells
Autor/es:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • Fuertes Marrón, David
  • Antolín Fernández, Elisa
  • García-Linares Fontes, Pablo
  • Luque López, Antonio
  • Farmer, C.D.
  • Stanley, Colin
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 23rd European Photovoltaic Solar Energy Conference
Fechas del Evento: 01/09/2008-05/09/2008
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 23rd European Photovoltaic Solar Energy Conference
Fecha: 2009
ISBN: 3-936338-24-8
Materias:
Palabras Clave Informales: Intermediate Band, Quantum Dots, Spectroscopy
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this paper we present an optical characterization for quantum dot intermediate band solar cells (QDIBSCs). The cells were developed by growing a stack of ten InAs/GaAs QDs layers between p and n doped GaAs conventional emitters. Electroluminescence, EL, photoreflectance, PR, and transmission electron microscopy, TEM, were applied to the samples in order to test and characterize them optically. The results, derived from the application of the different techniques, showed a good correlation. TEM images revealed a very good structural quality of the QDs, which seem to evolve in shape-strain from the bottom to the top of the stack. Corresponding to the quality observed by TEM, strong signals from EL and PR resolved unambiguously the energy band diagram of the QDIBSCs. By fitting PR data we were able to indentify the coexistence of bands and discrete energy levels coming from the IB material. The PR data evidenced also a strong electric field over the dots, attributed to the space charge region created between the p-n emitters sandwiching the IB material. From EL results, we identified the predominantly radiative nature of the IB material related energy transitions

Más información

ID de Registro: 3579
Identificador DC: http://oa.upm.es/3579/
Identificador OAI: oai:oa.upm.es:3579
Depositado por: Memoria Investigacion
Depositado el: 01 Abr 2011 10:03
Ultima Modificación: 20 Abr 2016 13:06
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