High Intensity Low Temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

Shvarts, Maxim and Gudovskikh, Alexander S. and Kalyuzhnyy, Nikolay A. and Mintairov, Sergey A. and Soluyanov, Andrei A. and Timoshina, Nailya Kh. and Luque López, Antonio (2014). High Intensity Low Temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs. In: "10th International Conference on Concentrator Photovoltaic Systems: CPV-10", 07/04/2014 - 09/04/2014, Albuquerque, New Mexico, USA. pp. 29-32.

Description

Title: High Intensity Low Temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs
Author/s:
  • Shvarts, Maxim
  • Gudovskikh, Alexander S.
  • Kalyuzhnyy, Nikolay A.
  • Mintairov, Sergey A.
  • Soluyanov, Andrei A.
  • Timoshina, Nailya Kh.
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 10th International Conference on Concentrator Photovoltaic Systems: CPV-10
Event Dates: 07/04/2014 - 09/04/2014
Event Location: Albuquerque, New Mexico, USA
Title of Book: AIP Conference Proceedings
Título de Revista/Publicación: AIP Conference Proceedings
Date: 2014
ISSN: 0094-243X
Volume: 1616
Subjects:
Freetext Keywords: Multi-junction solar cells, potential barrier, heterointerface, electroluminescence
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

More information

Item ID: 35792
DC Identifier: http://oa.upm.es/35792/
OAI Identifier: oai:oa.upm.es:35792
Official URL: http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.4897021
Deposited by: Memoria Investigacion
Deposited on: 24 Jun 2015 16:52
Last Modified: 24 Jun 2015 16:52
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