Synthesis and characterization of transition metal-subtituted indium thiospinels as intermediate band materials for high efficiency solar cells

Conesa, Jose Carlos and Lucena, Raquel and Wahnón Benarroch, Perla and Palacios Clemente, Pablo and Aguilera Bonet, Irene (2009). Synthesis and characterization of transition metal-subtituted indium thiospinels as intermediate band materials for high efficiency solar cells. In: "23rd European Photovoltaic Solar Energy Conference", 01/09/2008-05/09/2008, Valencia, España. ISBN 3-936338-24-8.

Description

Title: Synthesis and characterization of transition metal-subtituted indium thiospinels as intermediate band materials for high efficiency solar cells
Author/s:
  • Conesa, Jose Carlos
  • Lucena, Raquel
  • Wahnón Benarroch, Perla
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
Item Type: Presentation at Congress or Conference (Article)
Event Title: 23rd European Photovoltaic Solar Energy Conference
Event Dates: 01/09/2008-05/09/2008
Event Location: Valencia, España
Title of Book: Proceedings of the 23rd European Photovoltaic Solar Energy Conference
Date: 2009
ISBN: 3-936338-24-8
Subjects:
Freetext Keywords: Indium sulphide, Intermediate Band, Spectral Response, Solvothermal Synthesis, Doping
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

It was recently proposed that higher efficiency can be achieved in PV cells having a single-absorbent if for the latter an intermediate band (IB) material is used which contains a partially filled, isolated band within the gap of an otherwise normal semiconductor. In2S3 and related compounds in which octahedrally coordinated In is substituted by a light transition metal are IB material candidates according to solid state chemistry concepts, this having been confirmed by quantum calculations. Here materials of this type have been chemically synthesized in powder form using wet solvothermal methods. Especially for vanadium-substituted In2S3 , incorporation of the metal into the lattice is supported by XRD and TEM data, and only minor oxidation of vanadium from the V III state to the V IV state is evidenced by EPR. New sub-bandgap features appear in the diffuse reflectance optical spectra upon incorporation of vanadium; these coincide with the spectra that had been predicted by the quantum calculations as corresponding to the IB electronic structure. The realization of the IB concept in a single compound, that furthermore should be easy to prepare in the form needed for PV thin film cells, is thus achieved for the first time.

More information

Item ID: 3580
DC Identifier: http://oa.upm.es/3580/
OAI Identifier: oai:oa.upm.es:3580
Deposited by: Memoria Investigacion
Deposited on: 01 Apr 2011 10:16
Last Modified: 20 Apr 2016 13:06
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