Influence of fabrication steps on optical and electrical properties of InN thin films

Rani Mutta, Geeta and Brazzini, Tommaso and Méchin, Laurence and Guillet, Bruno and Routoure, Jean Marc and Doualan, Jean Louis and Grandal Quintana, Javier and Sabido Siller, María del Carmen and Calle Gómez, Fernando and Ruterana, Pierre (2014). Influence of fabrication steps on optical and electrical properties of InN thin films. "Semiconductor Science and Technology", v. 29 (n. 9); pp. 1-8. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/29/9/095010.

Description

Title: Influence of fabrication steps on optical and electrical properties of InN thin films
Author/s:
  • Rani Mutta, Geeta
  • Brazzini, Tommaso
  • Méchin, Laurence
  • Guillet, Bruno
  • Routoure, Jean Marc
  • Doualan, Jean Louis
  • Grandal Quintana, Javier
  • Sabido Siller, María del Carmen
  • Calle Gómez, Fernando
  • Ruterana, Pierre
Item Type: Article
Título de Revista/Publicación: Semiconductor Science and Technology
Date: September 2014
ISSN: 0268-1242
Volume: 29
Subjects:
Freetext Keywords: Indium nitride, low frequency noise and resistivity, morphology, plasma assisted MBE, fabrication
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This paper reports on a case study of the impact of fabrication steps on InN material properties. We discuss the influence of annealing time and sequence of device processing steps. Photoluminescence (PL), surface morphology and electrical transport (electrical resistivity and low frequency noise) properties have been studied as responses to the adopted fabrication steps. Surface morphology has a strong correlation with annealing times, while sequences of fabrication steps do not appear to be influential. In contrast, the optical and electrical properties demonstrate correlation with both etching and thermal annealing. For all the studied samples PL peaks were in the vicinity of 0.7 eV, but the intensity and full width at half maximum (FWHM) demonstrate a dependence on the technological steps followed. Sheet resistance and electrical resistivity seem to be lower in the case of high defect introduction due to both etching and thermal treatments. The same effect is revealed through 1/f noise level measurements. A reduction of electrical resistivity is connected to an increase in 1/f noise level.

More information

Item ID: 35931
DC Identifier: http://oa.upm.es/35931/
OAI Identifier: oai:oa.upm.es:35931
DOI: 10.1088/0268-1242/29/9/095010
Official URL: http://iopscience.iop.org/0268-1242/29/9/095010/pdf/0268-1242_29_9_095010.pdf
Deposited by: Memoria Investigacion
Deposited on: 12 Jul 2015 08:05
Last Modified: 01 Oct 2015 22:56
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