Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

Gao Zhan, Verónica; Romero Rojo, Fátima; Pampillón Arce, María Ángela; San Andrés Serrano, Enrique y Calle Gómez, Fernando (2014). Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric. En: "23th European Workshop on Heterostructures Technology (HETECH 2014)", 12/10/201 - 15/10/2014, Giessen, Germany. pp. 1-2.

Descripción

Título: Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
Autor/es:
  • Gao Zhan, Verónica
  • Romero Rojo, Fátima
  • Pampillón Arce, María Ángela
  • San Andrés Serrano, Enrique
  • Calle Gómez, Fernando
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 23th European Workshop on Heterostructures Technology (HETECH 2014)
Fechas del Evento: 12/10/201 - 15/10/2014
Lugar del Evento: Giessen, Germany
Título del Libro: 23th European Workshop on Heterostructures Technology (HETECH 2014)
Fecha: 2014
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Más información

ID de Registro: 36477
Identificador DC: http://oa.upm.es/36477/
Identificador OAI: oai:oa.upm.es:36477
Depositado por: Memoria Investigacion
Depositado el: 20 Jul 2015 16:20
Ultima Modificación: 06 Jun 2016 16:20
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