Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

Gao Zhan, Verónica and Romero Rojo, Fátima and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Calle Gómez, Fernando (2014). Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric. In: "23th European Workshop on Heterostructures Technology (HETECH 2014)", 12/10/201 - 15/10/2014, Giessen, Germany. pp. 1-2.

Description

Title: Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
Author/s:
  • Gao Zhan, Verónica
  • Romero Rojo, Fátima
  • Pampillón Arce, María Ángela
  • San Andrés Serrano, Enrique
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: 23th European Workshop on Heterostructures Technology (HETECH 2014)
Event Dates: 12/10/201 - 15/10/2014
Event Location: Giessen, Germany
Title of Book: 23th European Workshop on Heterostructures Technology (HETECH 2014)
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

More information

Item ID: 36477
DC Identifier: http://oa.upm.es/36477/
OAI Identifier: oai:oa.upm.es:36477
Deposited by: Memoria Investigacion
Deposited on: 20 Jul 2015 16:20
Last Modified: 06 Jun 2016 16:20
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