Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2014). Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency. In: "Workshop on Nanostructures for Solar Cells", 02/10/2014 - 03/10/2014, Braga , Portugal. p. 1.

Description

Title: Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Author/s:
  • Utrilla Lomas, Antonio David
  • Ulloa Herrero, José María
  • Gacevic, Zarko
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
Item Type: Presentation at Congress or Conference (Article)
Event Title: Workshop on Nanostructures for Solar Cells
Event Dates: 02/10/2014 - 03/10/2014
Event Location: Braga , Portugal
Title of Book: Workshop on Nanostructures for Solar Cells
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar cells. Particularly, stacking QD layers allows exploiting their unique properties, not only for intermediate-band solar cells or multiple exciton generation, but also for tandem cells in which the tunability of QD properties through the capping layer (CL) could be very useful.

More information

Item ID: 36592
DC Identifier: http://oa.upm.es/36592/
OAI Identifier: oai:oa.upm.es:36592
Deposited by: Memoria Investigacion
Deposited on: 28 Jul 2015 18:08
Last Modified: 06 Jun 2016 18:08
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