Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2014). Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency. In: "18th International Conference on Molecular Beam Epitaxy (MBE 2014)", 07/09/2014 - 12/09/2014, Flagstaff, Arizona, EE.UU. pp. 10-15.

Description

Title: Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Author/s:
  • Utrilla Lomas, Antonio David
  • Ulloa Herrero, José María
  • Gacevic, Zarko
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
Item Type: Presentation at Congress or Conference (Article)
Event Title: 18th International Conference on Molecular Beam Epitaxy (MBE 2014)
Event Dates: 07/09/2014 - 12/09/2014
Event Location: Flagstaff, Arizona, EE.UU
Title of Book: 18th International Conference on Molecular Beam Epitaxy (MBE 2014)
Date: 2014
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Different approaches have recently arisen aiming to exceed the Shockley-Queisser efficiency limit. Particularly, the use of self-organized quantum dots (QD) has been recently proposed in order to introduce new states within the barrier material, which enhances the subband gap absorption yielding a photocurrent increase. Stacking QD layers allows exploiting their unique properties for intermediate-band solar cells (SC) or tandem cells.In all these cases, tuning the QD properties by modifying the capping layer (CL) can be very useful.

More information

Item ID: 36593
DC Identifier: http://oa.upm.es/36593/
OAI Identifier: oai:oa.upm.es:36593
Deposited by: Memoria Investigacion
Deposited on: 01 Aug 2015 10:06
Last Modified: 06 Jun 2016 10:06
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