TEM study of the AlN grain orientation grown on NCD diamond substrate

Araujo Gay, Daniel and Villar Castro, María del Pilar and Lloret, Fernando and Rodríguez Madrid, Juan Gabriel and Fuentes Iriarte, Gonzalo and Williams, Oliver A. and Calle Gómez, Fernando (2014). TEM study of the AlN grain orientation grown on NCD diamond substrate. In: "12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014)", 18/06/2014 - 20/06/2014, Delphi, Greece. pp. 1-2.

Description

Title: TEM study of the AlN grain orientation grown on NCD diamond substrate
Author/s:
  • Araujo Gay, Daniel
  • Villar Castro, María del Pilar
  • Lloret, Fernando
  • Rodríguez Madrid, Juan Gabriel
  • Fuentes Iriarte, Gonzalo
  • Williams, Oliver A.
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014)
Event Dates: 18/06/2014 - 20/06/2014
Event Location: Delphi, Greece
Title of Book: 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014)
Date: 2014
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two types of samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state.

More information

Item ID: 36757
DC Identifier: http://oa.upm.es/36757/
OAI Identifier: oai:oa.upm.es:36757
Deposited by: Memoria Investigacion
Deposited on: 09 Dec 2015 17:16
Last Modified: 06 Jun 2016 17:16
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