Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy

Albert, Steven and Bengoechea Encabo, Ana and Sabido Siller, María del Carmen and Müller, M. and Schmidt, G. and Metzner, S. and Veit, P. and Bertram, F. and Sánchez García, Miguel Angel and Christen, J. and Calleja Pardo, Enrique (2014). Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy. In: "8th International Workshop on Nitride Semicon- ductors (IWN 2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. pp. 1-6.

Description

Title: Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Sabido Siller, María del Carmen
  • Müller, M.
  • Schmidt, G.
  • Metzner, S.
  • Veit, P.
  • Bertram, F.
  • Sánchez García, Miguel Angel
  • Christen, J.
  • Calleja Pardo, Enrique
Item Type: Presentation at Congress or Conference (Speech)
Event Title: 8th International Workshop on Nitride Semicon- ductors (IWN 2014)
Event Dates: 24/08/2014 - 29/08/2014
Event Location: Wroclaw, Poland
Title of Book: 8th International Workshop on Nitride Semicon- ductors (IWN 2014)
Date: 2014
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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More information

Item ID: 36787
DC Identifier: http://oa.upm.es/36787/
OAI Identifier: oai:oa.upm.es:36787
Deposited by: Memoria Investigacion
Deposited on: 20 Dec 2015 11:16
Last Modified: 06 Jun 2016 11:16
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