Growth of InGaN/GaN core-shell structures by molecular beam epitaxy

Albert, Steven and Bengoechea Encabo, Ana and Sabido Siller, María del Carmen and Müller, M. and Schmidt, G. and Metzner, S. and Veit, P. and Bertram, F. and Sánchez García, Miguel Angel and Christen, J. and Calleja Pardo, Enrique (2014). Growth of InGaN/GaN core-shell structures by molecular beam epitaxy. In: "European Materials Research Society (E-MRS) 2014 Spring Meeting", 19/05/2014 - 26/05/2014, Lille, France. pp. 1-4.

Description

Title: Growth of InGaN/GaN core-shell structures by molecular beam epitaxy
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Sabido Siller, María del Carmen
  • Müller, M.
  • Schmidt, G.
  • Metzner, S.
  • Veit, P.
  • Bertram, F.
  • Sánchez García, Miguel Angel
  • Christen, J.
  • Calleja Pardo, Enrique
Item Type: Presentation at Congress or Conference (Speech)
Event Title: European Materials Research Society (E-MRS) 2014 Spring Meeting
Event Dates: 19/05/2014 - 26/05/2014
Event Location: Lille, France
Title of Book: European Materials Research Society (E-MRS) 2014 Spring Meeting
Date: 2014
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Efficiency drop in the green–yellow region in planar InGaN structures associated with: -high defect density -high spontaneous and piezoelectric polarization

More information

Item ID: 36788
DC Identifier: http://oa.upm.es/36788/
OAI Identifier: oai:oa.upm.es:36788
Deposited by: Memoria Investigacion
Deposited on: 05 Dec 2015 09:39
Last Modified: 31 Oct 2018 11:17
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