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Growth of InGaN/GaN core-shell structures by molecular beam epitaxy
Citation
Albert, Steven and Bengoechea Encabo, Ana and Sabido Siller, María del Carmen and Müller, M. and Schmidt, G. and Metzner, S. and Veit, P. and Bertram, F. and Sánchez García, Miguel Angel and Christen, J. and Calleja Pardo, Enrique (2014). Growth of InGaN/GaN core-shell structures by molecular beam epitaxy. In: "European Materials Research Society (E-MRS) 2014 Spring Meeting", 19/05/2014 - 26/05/2014, Lille, France. pp. 1-4.
Description
| Title: | Growth of InGaN/GaN core-shell structures by molecular beam epitaxy |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Speech) |
| Event Title: | European Materials Research Society (E-MRS) 2014 Spring Meeting |
| Event Dates: | 19/05/2014 - 26/05/2014 |
| Event Location: | Lille, France |
| Title of Book: | European Materials Research Society (E-MRS) 2014 Spring Meeting |
| Date: | 2014 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Efficiency drop in the green–yellow region in planar InGaN structures associated with: -high defect density -high spontaneous and piezoelectric polarization
More information
| Item ID: | 36788 |
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| DC Identifier: | http://oa.upm.es/36788/ |
| OAI Identifier: | oai:oa.upm.es:36788 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 05 Dec 2015 09:39 |
| Last Modified: | 31 Oct 2018 11:17 |
