Deep level analysis of homoepitaxial ZnO doped with N

Kurtz de Griñó, Alejandro and Hierro Cano, Adrián and Gura, Leonard and Muñoz Merino, Elías and Chauveau, Jean Michelle (2014). Deep level analysis of homoepitaxial ZnO doped with N. In: "2014 MRS Fall Meeting & Exhibit", 30/11/2014 - 05/12/2014, Boston, Massachusetts, EE.UU. pp. 1-15.

Description

Title: Deep level analysis of homoepitaxial ZnO doped with N
Author/s:
  • Kurtz de Griñó, Alejandro
  • Hierro Cano, Adrián
  • Gura, Leonard
  • Muñoz Merino, Elías
  • Chauveau, Jean Michelle
Item Type: Presentation at Congress or Conference (Speech)
Event Title: 2014 MRS Fall Meeting & Exhibit
Event Dates: 30/11/2014 - 05/12/2014
Event Location: Boston, Massachusetts, EE.UU
Title of Book: 2014 MRS Fall Meeting & Exhibit
Date: 2014
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

High intrinsic carrier concentration (n-type) • Efforts to reduce this effect: • Homoepitaxy1 • Non-polar orientations • Similar samples exhibit residual doping as low as ~1014 cm-3 (2) The path to p-type doping • Many dopants proposed • N is a promising candidate • Simple NO is a deep level • Complex levels have shallower energies • N-related levels observed near the VB by many groups • Energies between 130 meV and 160 meV from VBM

More information

Item ID: 36804
DC Identifier: http://oa.upm.es/36804/
OAI Identifier: oai:oa.upm.es:36804
Deposited by: Memoria Investigacion
Deposited on: 03 Nov 2015 19:09
Last Modified: 06 Jun 2016 19:09
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