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Deep level analysis of homoepitaxial ZnO doped with N
Citation
Kurtz de Griñó, Alejandro and Hierro Cano, Adrián and Gura, Leonard and Muñoz Merino, Elías and Chauveau, Jean Michelle (2014). Deep level analysis of homoepitaxial ZnO doped with N. In: "2014 MRS Fall Meeting & Exhibit", 30/11/2014 - 05/12/2014, Boston, Massachusetts, EE.UU. pp. 1-15.
Description
| Title: | Deep level analysis of homoepitaxial ZnO doped with N |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Speech) |
| Event Title: | 2014 MRS Fall Meeting & Exhibit |
| Event Dates: | 30/11/2014 - 05/12/2014 |
| Event Location: | Boston, Massachusetts, EE.UU |
| Title of Book: | 2014 MRS Fall Meeting & Exhibit |
| Date: | 2014 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
High intrinsic carrier concentration (n-type) • Efforts to reduce this effect: • Homoepitaxy1 • Non-polar orientations • Similar samples exhibit residual doping as low as ~1014 cm-3 (2) The path to p-type doping • Many dopants proposed • N is a promising candidate • Simple NO is a deep level • Complex levels have shallower energies • N-related levels observed near the VB by many groups • Energies between 130 meV and 160 meV from VBM
More information
| Item ID: | 36804 |
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| DC Identifier: | http://oa.upm.es/36804/ |
| OAI Identifier: | oai:oa.upm.es:36804 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 03 Nov 2015 19:09 |
| Last Modified: | 06 Jun 2016 19:09 |
