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Kurtz de Griñó, Alejandro and Hierro Cano, Adrián and Gura, Leonard and Muñoz Merino, Elías and Chauveau, Jean Michelle (2014). Deep level analysis of homoepitaxial ZnO doped with N. In: "2014 MRS Fall Meeting & Exhibit", 30/11/2014 - 05/12/2014, Boston, Massachusetts, EE.UU. pp. 1-15.
Title: | Deep level analysis of homoepitaxial ZnO doped with N |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Speech) |
Event Title: | 2014 MRS Fall Meeting & Exhibit |
Event Dates: | 30/11/2014 - 05/12/2014 |
Event Location: | Boston, Massachusetts, EE.UU |
Title of Book: | 2014 MRS Fall Meeting & Exhibit |
Date: | 2014 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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High intrinsic carrier concentration (n-type) • Efforts to reduce this effect: • Homoepitaxy1 • Non-polar orientations • Similar samples exhibit residual doping as low as ~1014 cm-3 (2) The path to p-type doping • Many dopants proposed • N is a promising candidate • Simple NO is a deep level • Complex levels have shallower energies • N-related levels observed near the VB by many groups • Energies between 130 meV and 160 meV from VBM
Item ID: | 36804 |
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DC Identifier: | http://oa.upm.es/36804/ |
OAI Identifier: | oai:oa.upm.es:36804 |
Deposited by: | Memoria Investigacion |
Deposited on: | 03 Nov 2015 19:09 |
Last Modified: | 06 Jun 2016 19:09 |