Physical model for GaN HEMT design optimization in high frequency switching applications

Cucak, Dejana and Vasic, Miroslav and García, Oscar and Bouvier, Yann and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Wang, Ashu and Martin Horcajo, Sara and Romero Rojo, Fátima and Calle Gómez, Fernando (2014). Physical model for GaN HEMT design optimization in high frequency switching applications. In: "44th European Solid State Device Research Conference (ESSDERC 2014)", 22/09/2014 - 26/09/2014, Venice, Italy. pp. 393-396. https://doi.org/10.1109/ESSDERC.2014.6948843.

Description

Title: Physical model for GaN HEMT design optimization in high frequency switching applications
Author/s:
  • Cucak, Dejana
  • Vasic, Miroslav
  • García, Oscar
  • Bouvier, Yann
  • Oliver Ramírez, Jesús Angel
  • Alou Cervera, Pedro
  • Cobos Márquez, José Antonio
  • Wang, Ashu
  • Martin Horcajo, Sara
  • Romero Rojo, Fátima
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: 44th European Solid State Device Research Conference (ESSDERC 2014)
Event Dates: 22/09/2014 - 26/09/2014
Event Location: Venice, Italy
Title of Book: 44th European Solid State Device Research Conference (ESSDERC 2014)
Date: 2014
Subjects:
Freetext Keywords: GaN HEMTs; physical modeling; output characteristics, parasitic capacitances
Faculty: Centro de Electrónica Industrial (CEI) (UPM)
Department: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this paper, physical modeling of a GaN HEMT is proposed, with the objective of device design optimization for application in a high frequency DC/DC converter. From the point of view of a switching application, physical model for input, output and reverse capacitance as well as for channel resistance is very important, since the aforementioned parameters determine power losses in the circuit. The obtained physical model of the switching device can be used for simulation models such as PSpice or hybrid behavioral power loss models for high frequency DC/DC converters. In this work, extrinsic model for Id (Vds, Vgs) output characteristics of a depletion mode GaN HEMT with a field plate structure was obtained, as well as physical model for input, output and reverse capacitance in the subthreshold regime. The model was implemented in Simplorer simulation model and verified by the measured efficiency curves of the buck converter prototype, using the GaN HEMT that was analyzed. With the increase of the switching frequency, precision of the model increases, especially in the low power area, which is the area of interest in our application.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2012-38247-C02-01UnspecifiedMinisterio de Economía y CompetitividadUnspecified
Government of SpainCSD 2009-00046UnspecifiedMinisterio de Educación y CienciaUnspecified

More information

Item ID: 37145
DC Identifier: http://oa.upm.es/37145/
OAI Identifier: oai:oa.upm.es:37145
DOI: 10.1109/ESSDERC.2014.6948843
Official URL: http://ieeexplore.ieee.org/document/6948843/
Deposited by: Memoria Investigacion
Deposited on: 02 Apr 2017 07:23
Last Modified: 02 Apr 2017 07:23
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