Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Cucak, Dejana and Vasic, Miroslav and García, Oscar and Bouvier, Yann and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Wang, Ashu and Martin Horcajo, Sara and Romero Rojo, Fátima and Calle Gómez, Fernando (2014). Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application. In: "IEEE Energy Conversion Congress and Exposition (ECCE 2014)", 14/09/2014 - 18/09/2014, Pittsburgh,Pennsylvania, USA. pp. 2857-2864. https://doi.org/10.1109/ECCE.2014.6953786.

Description

Title: Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application
Author/s:
  • Cucak, Dejana
  • Vasic, Miroslav
  • García, Oscar
  • Bouvier, Yann
  • Oliver Ramírez, Jesús Angel
  • Alou Cervera, Pedro
  • Cobos Márquez, José Antonio
  • Wang, Ashu
  • Martin Horcajo, Sara
  • Romero Rojo, Fátima
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE Energy Conversion Congress and Exposition (ECCE 2014)
Event Dates: 14/09/2014 - 18/09/2014
Event Location: Pittsburgh,Pennsylvania, USA
Title of Book: IEEE Energy Conversion Congress and Exposition (ECCE 2014)
Date: 2014
Subjects:
Faculty: Centro de Electrónica Industrial (CEI) (UPM)
Department: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Abstract: In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular application, which in our case is a high frequency DC DC converter for Envelope Tracking and Envelope Elimination and Restoration techniques. In this work, extrinsic models for output characteristics together with input, output and reverse capacitance of a depletion mode GaN HEMT with a field plate structure were obtained. The obtained physical model was implemented in a Simplorer simulation model of a high frequency buck converter and verified by the prototype that employed modeled GaN HEMT, operating at 7, 15 and 20MHz of switching frequency. Comparing to the measured efficiency curves, simulation results showed good agreement, especially in the low power range at high switching frequency, which are the operating conditions in our application.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2012-38247-C02-01UnspecifiedMinisterio de Economía y CompetitividadUnspecified
Government of SpainCSD 2009-00046UnspecifiedMinisterio de Educación y CienciaUnspecified

More information

Item ID: 37146
DC Identifier: http://oa.upm.es/37146/
OAI Identifier: oai:oa.upm.es:37146
DOI: 10.1109/ECCE.2014.6953786
Official URL: http://ieeexplore.ieee.org/document/6953786/?tp=&arnumber=6953786
Deposited by: Memoria Investigacion
Deposited on: 02 Apr 2017 07:38
Last Modified: 02 Apr 2017 07:38
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