Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

García Vara, Iván; Geisz, John F.; France, Ryan M.; Steiner, Myles A. y Friedman, Daniel J. (2014). Component integration strategies in metamorphic 4-junction III-V concentrator solar cells. En: "10th Internacional Conference on Concentrator Photovoltaic: CPV-10", 07/04/2014 - 09/04/2014, Albuquerque, New Mexico, EE.UU. pp. 41-44. https://doi.org/10.1063/1.4897024.

Descripción

Título: Component integration strategies in metamorphic 4-junction III-V concentrator solar cells
Autor/es:
  • García Vara, Iván
  • Geisz, John F.
  • France, Ryan M.
  • Steiner, Myles A.
  • Friedman, Daniel J.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 10th Internacional Conference on Concentrator Photovoltaic: CPV-10
Fechas del Evento: 07/04/2014 - 09/04/2014
Lugar del Evento: Albuquerque, New Mexico, EE.UU
Título del Libro: AIP Conference Proceedings
Título de Revista/Publicación: AIP Conference Proceedings
Fecha: Abril 2014
Volumen: 1616
Materias:
Palabras Clave Informales: 4-junction solar cell, tunnel junction, metamorphic buffer
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7EC/FP7/299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

Más información

ID de Registro: 37386
Identificador DC: http://oa.upm.es/37386/
Identificador OAI: oai:oa.upm.es:37386
Identificador DOI: 10.1063/1.4897024
Depositado por: Memoria Investigacion
Depositado el: 07 Sep 2015 16:19
Ultima Modificación: 07 Sep 2015 16:19
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