Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

García Vara, Iván and Geisz, John F. and France, Ryan M. and Steiner, Myles A. and Friedman, Daniel J. (2014). Component integration strategies in metamorphic 4-junction III-V concentrator solar cells. In: "10th Internacional Conference on Concentrator Photovoltaic: CPV-10", 07/04/2014 - 09/04/2014, Albuquerque, New Mexico, EE.UU. pp. 41-44. https://doi.org/10.1063/1.4897024.

Description

Title: Component integration strategies in metamorphic 4-junction III-V concentrator solar cells
Author/s:
  • García Vara, Iván
  • Geisz, John F.
  • France, Ryan M.
  • Steiner, Myles A.
  • Friedman, Daniel J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 10th Internacional Conference on Concentrator Photovoltaic: CPV-10
Event Dates: 07/04/2014 - 09/04/2014
Event Location: Albuquerque, New Mexico, EE.UU
Title of Book: AIP Conference Proceedings
Título de Revista/Publicación: AIP Conference Proceedings
Date: April 2014
ISSN: 0094-243X
Volume: 1616
Subjects:
Freetext Keywords: 4-junction solar cell, tunnel junction, metamorphic buffer
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7EC/FP7/299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

More information

Item ID: 37386
DC Identifier: http://oa.upm.es/37386/
OAI Identifier: oai:oa.upm.es:37386
DOI: 10.1063/1.4897024
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2015 16:19
Last Modified: 07 Sep 2015 16:19
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