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Barrutia Poncela, Laura and Barrigón Montañés, Enrique and García Vara, Iván and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos (2014). Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells. "Semiconductor today: Compounds & Advanced Silicon", v. 9 (n. 8); pp. 80-81. ISSN 1752-2935.
Title: | Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Semiconductor today: Compounds & Advanced Silicon |
Date: | October 2014 |
ISSN: | 1752-2935 |
Volume: | 9 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.
Type | Code | Acronym | Leader | Title |
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Government of Spain | IPT-2011-1441-920000 | Unspecified | Unspecified | Unspecified |
Government of Spain | TEC2011-28639-C02-01 | Unspecified | Unspecified | Unspecified |
Government of Spain | IPT-2011-1408-420000 | Unspecified | Unspecified | Unspecified |
FP7 | EC/FP7/283798 | NGCPV | UNIVERSIDAD POLITECNICA DE MADRID | A new generation of concentrator photovoltaic cells, modules and systems |
FP7 | EC/FP7/299878 | METACELLS | UNIVERSIDAD POLITECNICA DE MADRID | Advanced epitaxy of metamorphic semiconductor structures for multijunction solar cells |
Item ID: | 37387 |
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DC Identifier: | http://oa.upm.es/37387/ |
OAI Identifier: | oai:oa.upm.es:37387 |
Official URL: | http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2014-Highly-conductive.pdf |
Deposited by: | Memoria Investigacion |
Deposited on: | 02 Dec 2015 17:10 |
Last Modified: | 02 Dec 2015 17:10 |