Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells

Barrutia Poncela, Laura; Barrigón Montañés, Enrique; García Vara, Iván; Rey-Stolle Prado, Ignacio y Algora del Valle, Carlos (2014). Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells. "Semiconductor today: Compounds & Advanced Silicon", v. 9 (n. 8); pp. 80-81. ISSN 1752-2935.

Descripción

Título: Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells
Autor/es:
  • Barrutia Poncela, Laura
  • Barrigón Montañés, Enrique
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
Tipo de Documento: Artículo
Título de Revista/Publicación: Semiconductor today: Compounds & Advanced Silicon
Fecha: Octubre 2014
Volumen: 9
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaIPT-2011-1441-920000Sin especificarSin especificarSin especificar
Gobierno de EspañaTEC2011-28639-C02-01Sin especificarSin especificarSin especificar
Gobierno de EspañaIPT-2011-1408-420000Sin especificarSin especificarSin especificar
FP7EC/FP7/283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
FP7EC/FP7/299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

Más información

ID de Registro: 37387
Identificador DC: http://oa.upm.es/37387/
Identificador OAI: oai:oa.upm.es:37387
URL Oficial: http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2014-Highly-conductive.pdf
Depositado por: Memoria Investigacion
Depositado el: 02 Dic 2015 17:10
Ultima Modificación: 02 Dic 2015 17:10
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