Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells

Barrutia Poncela, Laura and Barrigón Montañés, Enrique and García Vara, Iván and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos (2014). Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells. "Semiconductor today: Compounds & Advanced Silicon", v. 9 (n. 8); pp. 80-81. ISSN 1752-2935.

Description

Title: Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells
Author/s:
  • Barrutia Poncela, Laura
  • Barrigón Montañés, Enrique
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
Item Type: Article
Título de Revista/Publicación: Semiconductor today: Compounds & Advanced Silicon
Date: October 2014
ISSN: 1752-2935
Volume: 9
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainIPT-2011-1441-920000UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2011-28639-C02-01UnspecifiedUnspecifiedUnspecified
Government of SpainIPT-2011-1408-420000UnspecifiedUnspecifiedUnspecified
FP7EC/FP7/283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
FP7EC/FP7/299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

More information

Item ID: 37387
DC Identifier: http://oa.upm.es/37387/
OAI Identifier: oai:oa.upm.es:37387
Official URL: http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2014-Highly-conductive.pdf
Deposited by: Memoria Investigacion
Deposited on: 02 Dec 2015 17:10
Last Modified: 02 Dec 2015 17:10
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