Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm

García Tijero, José Manuel and Vilera Suárez, María Fernanda and Consoli Barone, Antonio and Esquivias Moscardo, Ignacio and Borruel Navarro, Luis (2014). Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm. In: "Semiconductor Lasers and Laser Dynamics VI", May 2, 2014. ISBN 9781628410822.

Description

Title: Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm
Author/s:
  • García Tijero, José Manuel
  • Vilera Suárez, María Fernanda
  • Consoli Barone, Antonio
  • Esquivias Moscardo, Ignacio
  • Borruel Navarro, Luis
Item Type: Presentation at Congress or Conference (Article)
Event Title: Semiconductor Lasers and Laser Dynamics VI
Event Dates: May 2, 2014
Title of Book: SPIE Proceedings Vol. 9134: Semiconductor Lasers and Laser Dynamics VI
Título de Revista/Publicación: Proc. of SPIE Vol. 9134, Semiconductor Lasers and Laser Dynamics VI
Date: 2014
ISBN: 9781628410822
ISSN: 0277-786X
Subjects:
Faculty: E.T.S. Arquitectura (UPM)
Department: Estructuras y Física de Edificación
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2012-38864-C03-02UnspecifiedUnspecifiedUnspecified
FP7313200BRITESPACEUNIVERSIDAD POLITECNICA DE MADRIDHigh Brightness Semiconductor Laser Sources for Space Applications in Earth Observation

More information

Item ID: 37440
DC Identifier: http://oa.upm.es/37440/
OAI Identifier: oai:oa.upm.es:37440
Deposited by: Memoria Investigacion
Deposited on: 16 Sep 2015 08:08
Last Modified: 12 May 2020 09:26
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