Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells

Alonso Alvarez, Diego and González Taboada, Alfonso and González Diez, M. Yolanda and Ripalda Cobián, Jose María and Alén Millán, Benito and González Soto, Luisa and García Martín, Jorge Miguel and Luque López, Antonio and Martí Vega, Antonio and Briones Fernández-Pola, Fernando and Sánchez, Almudena M. and Molina Rubio, Sergio Ignacio (2008). Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells. In: "33rd IEEE Photovoltaic Specialist Conference. PVSC '08", 11/05/2008-16/05/2008, San Diego, EEUU. ISBN 978-1-4244-1641. pp. 1719-1724.

Description

Title: Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells
Author/s:
  • Alonso Alvarez, Diego
  • González Taboada, Alfonso
  • González Diez, M. Yolanda
  • Ripalda Cobián, Jose María
  • Alén Millán, Benito
  • González Soto, Luisa
  • García Martín, Jorge Miguel
  • Luque López, Antonio
  • Martí Vega, Antonio
  • Briones Fernández-Pola, Fernando
  • Sánchez, Almudena M.
  • Molina Rubio, Sergio Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 33rd IEEE Photovoltaic Specialist Conference. PVSC '08
Event Dates: 11/05/2008-16/05/2008
Event Location: San Diego, EEUU
Title of Book: Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Date: 2008
ISBN: 978-1-4244-1641
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work we report the stacking of 10 and 50 InAs quantum dots layers using 2 monolayers of GaP for stress compensation and a stack period of 18 nm on GaAs (001) substrates. Very good structural and optical quality is found in both samples. Vertical alignment of the dots is observed by transmission electron microscopy suggesting the existence of residual stress around them. Photocurrent measurements show light absorption up to 1.2 μm in the nanostructures together with a reduction in the blue response of the device. As a result of the phosphorus incorporation in the barriers, a very high thermal activation energy (431 meV) has also been obtained for the quantum dot emission.

More information

Item ID: 3755
DC Identifier: http://oa.upm.es/3755/
OAI Identifier: oai:oa.upm.es:3755
Official URL: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4815197
Deposited by: Memoria Investigacion
Deposited on: 15 Jul 2010 08:17
Last Modified: 20 Apr 2016 13:14
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